HSMP-3814-TR1G Avago Technologies US Inc., HSMP-3814-TR1G Datasheet - Page 3

• Manufacturer Part Number: HSMP-3814-TR1G
• Description: DIODE PIN ATTENUATOR 100V SOT-23
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMP-3814-TR1G

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 100V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.35pF @ 50V, 1MHz
• Resistance @ If, F: 3 Ohm @ 100mA, 100MHz
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Termination Style: SMD/SMT
• Carrier Life: 1.5 us
• Maximum Diode Capacitance: 0.35 pF @ 50 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 3 Ohm @ 100 mA
• Maximum Series Resistance @ Minimum If: 53 Ohm (Typ) @ 1 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Recovery Time: 300 nS
• Diode Case Style: SOT-23
• Breakdown Voltage: 100V
• Capacitance Ct: 0.27pF
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1800-2; HSMP-3814-TR1G

Typical Parameters at T
Notes:
3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.
3
Typical Parameters at T
Part Number
HSMP-
381x
Test Conditions
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 4. Forward Current vs. Forward
Voltage.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.01
100
0.1
10
1
0
0
2
V
F
0.2
4
REVERSE VOLTAGE (V)
– FORWARD VOLTAGE (mA)
125 C 25 C –50 C
1 MHz
30 MHz
frequency>100 MHz
6
0.4
8
10 12
0.6
C
C
= 25°C
= 25°C (unless otherwise noted), Single Diode
0.8
Series Resistance
14
f = 100 MHz
I
16
F
1.0
= 1 mA
R
S
53
18 20
(Ω)
1.2
Typical Applications for Multiple Diode Products
INPUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
10000
1000
Figure 2. RF Resistance vs. Forward
Bias Current, f = 100MHz
100
10
1
0.01
I
F
Carrier Lifetime
– FORWARD BIAS CURRENT (mA)
I
R
I
F
= 250 mA
= 50 mA
W (ns)
1500
0.1
1
T
T
T
A
A
A
= +85 C
= +25 C
= –55 C
VARIABLE BIAS
10
VOLTAGE
FIXED
BIAS
Reverse Recovery Time
100
90% Recovery
I
F
V
= 20 mA
R
T
rr
300
= 10 V
(ns)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
120
100
110
90
80
70
60
50
40
1000
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
DIODE RF RESISTANCE (OHMS)
100
Capacitance
0.27 @ 50 V
RF IN/OUT
f = 1 MHz
C
Total
T
(pF)
10