MMBD352LT1G ON Semiconductor, MMBD352LT1G Datasheet

MMBD352LT1G

Manufacturer Part Number

MMBD352LT1G

Description

DIODE SWITCH DUAL 7V SOT23

Manufacturer

ON Semiconductor

Datasheets

1.MMBD352LT1G.pdf (3 pages)

2.MMBD352LT1G.pdf (3 pages)

Specifications of MMBD352LT1G

Diode Type

Schottky - 1 Pair Series Connection

Voltage - Peak Reverse (max)

Capacitance @ Vr, F

1pF @ 0V, 1MHz

Power Dissipation (max)

225mW

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Ultra Fast Recovery Rectifier

Configuration

Dual Series

Reverse Voltage

7 V

Forward Voltage Drop

0.6 V @ 0.01 A

Reverse Current Ir

10 uA

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Capacitance, Junction

1 pF

Current, Forward

10 mA

Package Type

SOT-23 (TO-236)

Power Dissipation

225 mW

Primary Type

Schottky Barrier

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Voltage, Forward

0.6 V

Voltage, Reverse

7 V

Rectifier Type

Switching Diode

Peak Rep Rev Volt

Rev Curr

10uA

Forward Voltage

0.6V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Max

Resistance @ If, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MMBD352LT1GOS
MMBD352LT1GOS
MMBD352LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD352LT1G

Manufacturer:

Quantity:

1 673

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD352LT1G

Manufacturer:

ON Semiconductor

Quantity:

9 813

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD352LT1G

Manufacturer:

ON Semiconductor

Quantity:

1 650

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMBD352LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 3
Download datasheet (118Kb)

MMBD352LT1G,

MMBD353LT1G,

MMBD354LT1G,

MMBD355LT1G

Dual Hot Carrier Mixer

Diodes

but are suitable also for use in detector and ultra−fast switching

circuits.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. For each individual diode while the second diode is unbiased.

August, 2009 − Rev. 7

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(EACH DIODE)

Continuous Reverse Voltage

Total Device Dissipation FR−5 Board,

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Forward Voltage

Reverse Leakage Current (Note 3)

Capacitance

These devices are designed primarily for UHF mixer applications

Compliant

Very Low Capacitance − Less Than 1.0 pF @ Zero V

Low Forward Voltage − 0.5 V (Typ) @ I

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Note 1) T

Derate above 25°C

Substrate, (Note 2) T

Derate above 25°C

= 10 mAdc)

= 3.0 V)

= 7.0 V)

= 0 V, f = 1.0 MHz)

Characteristic

= 25°C

Rating

(EACH DIODE)

= 25°C

= 25°C unless otherwise noted)

Symbol

, T

qJA

= 10 mA

stg

−55 to +150

Min

−

Value

Max

225

556

300

417

7.0

1.8

2.4

Max

0.60

0.25

1.0

mW/°C

°C/W

Unit

°C

See detailed ordering, marking, and shipping information in the

package dimensions section on page 2 of this data sheet.

*Date Code orientation and/or overbar may

ANODE 3

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

CATHODE

ORDERING INFORMATION

ANODE

MARKING DIAGRAM

Mxx = Device Code

http://onsemi.com

CATHODE/ANODE

= Date Code*

= Pb−Free Package

MMBD352LT1

MMBD353LT1

MMBD354LT1

MMBD355LT1

STYLE 11

STYLE 19

STYLE 12

STYLE 9

Mxx M G

Publication Order Number:

SOT−23 (TO−236)

CASE 318

CATHODE

1 ANODE

2 ANODE

ANODE

MMBD352LT1/D

1 CATHODE

2 CATHODE

Related parts for MMBD352LT1G

MMBD352LT1G Summary of contents

Page 1

... MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1 Zero V • Low Forward Voltage − 0.5 V (Typ • ...

Page 2

... V , FORWARD VOLTAGE (VOLTS) F Figure 1. Forward Voltage ORDERING INFORMATION Device Marking MMBD352LT1G MMBD352LT3G MMBD353LT1G MMBD353LT3G MMBD354LT1G MMBD355LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1 ...

Page 3

... CATHODE 3. ANODE *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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