ARF460BG Microsemi Power Products Group, ARF460BG Datasheet

ARF460BG

Manufacturer Part Number

ARF460BG

Description

FET RF N-CH 500V 14A TO247

Manufacturer

Microsemi Power Products Group

Datasheet

1.ARF460BG.pdf (4 pages)

Specifications of ARF460BG

Transistor Type

N-Channel

Frequency

40.68MHz

Gain

15dB

Voltage - Rated

500V

Current Rating

14A

Current - Test

50mA

Voltage - Test

125V

Package / Case

TO-247-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Output

Noise Figure

Other names

ARF460BGMP
ARF460BGMP

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ARF460BG

Manufacturer:

Microsemi

Quantity:

1 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

ARF460BG

Manufacturer:

MICROSEMI/美高森美

Quantity:

20 000

Current page: 1 of 4
Download datasheet (139Kb)

The ARF460A and ARF460B comprise a symmetric pair of common source RF power

transistors designed for push-pull scientiﬁ c, commercial, medical and industrial RF power

ampliﬁ er applications up to 65MHz. They have been optimized for both linear and high

efﬁ ciency classes of operation.

Maximum Ratings

Static Electrical Characteristics

• Speciﬁ ed 125 Volt, 40.68MHz Characteristics:

Symbol

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

DS(ON)

GS(TH)

DSS

GSS

, T

DGO

DSS

STG

Output Power = 150 Watts.

Gain = 13dB (Class AB)

Efﬁ ciency = 75% (Class C)

Parameter

Drain-Source Breakdown Voltage (V

On State Drain Voltage

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Power Dissipation @ T

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063” from Case for 10 Sec.

N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFET

Microsemi Website - http://www.microsemi.com

D(ON)

= V

= 25°C

= 7A, V

= 25V, I

= 25°C

, I

= ±30V, V

= V

= 0.8V

= 50mA)

= 0V, I

• Low Cost Common Source RF Package.

• Low Vth thermal coefﬁ cient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness

• RoHS Compliant

DSS

= 10V)

= 7A)

, V

DSS

= 250 μA)

, V

= 0V)

= 0, T

All Ratings: T

= 125°C)

=25°C unless otherwise speciﬁ ed

Min

500

3.3

ARF460AG/BG

-55 to 150

Typ

0.50

5.5

500

±30

250

300

125V, 150W, 65MHz

ARF460A/G

ARF460B/G

±100

Max

250

Common

Source

mhos

Volts

°C/W

Unit

μA

°C

Related parts for ARF460BG

ARF460BG Summary of contents

Page 1

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientiﬁ c, commercial, medical and industrial RF power ampliﬁ er applications up to 65MHz. They have been ...

Page 2

Dynamic Characteristics Symbol Parameter C Input Capacitance ISS C Output Capacitance oss C Reverse Transfer Capacitance rss t Turn-on Delay Time d(ON) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f Functional Characteristics Symbol Characteristic G ...

Page 3

T , CASE TEMPERATURE (°C) C Figure 5, Typical Threshold Voltage vs Temperature 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 ...

Page 4

Bias 0 - 12V - Input 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 ...

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