BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 3

• Manufacturer Part Number: BLF147,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF147,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 450@28VpF
• Output Capacitance (typ)@vds: 360@28VpF
• Reverse Capacitance (typ): 55@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40%
• Mounting: Screw
• Mode Of Operation: SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2385; 933930000112; BLF147; BLF147

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
handbook, halfpage
V
V
I
P
T
T
R
R
D
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF power MOS transistor
SYMBOL
SYMBOL
(1) Current is this area may be limited by R
(2) T
(A)
I D
10
10
mb
1
2
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
Fig.2 DC SOAR.
10
PARAMETER
(2)
V DS (V)
DSon
.
PARAMETER
MRA904
10
Rev. 06 - 5 December 2006
2
T
mb
handbook, halfpage
25 C
CONDITIONS
(1) Short-time operation during mismatch.
(2) Continuous operation.
P tot
(W)
300
200
100
0
0
Fig.3 Power derating curves.
(1)
(2)
50
65
MIN.
VALUE
0.8
0.2
100
65
25
220
150
200
Product specification
20
MAX.
T h ( C)
BLF147
MGP049
3 of 15
UNIT
K/W
K/W
150
V
V
A
W
C
C
UNIT