BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 17

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
2003 Sep 19
L14, L17
L15, L16
L18, L19
L20, L21
R1
R2, R7
R3, R6
R4, R5
R8, R9
R10
R11
IC1
VHF push-pull power MOS transistor
COMPONENT
reinforced PTFE dielectric (
2
wideband HF chokes in parallel
1
wire
stripline; note 2
stripline; note 2
metal film resistor
10 turns potentiometer
metal film resistor
metal film resistor
metal film resistor
metal film resistor
metal film resistor
voltage regulator 78L05
3
4
grade 3B Ferroxcube
turns enamelled 2 mm copper
DESCRIPTION
r
= 2.2), thickness
1
16
inch; thickness of copper sheet 2
40 nH
43
43
10 , 0.4 W
50 k
1 k , 0.4 W
2
parallel, 0.4 W
10
4
parallel, 1 W
5.11 k
17
5.62
42.2
VALUE
5%, 1 W
1 W
in
in
int. dia. 10 mm
leads 2
space 1 mm
length 13 mm
width 6 mm
length 29.5 mm
width 6 mm
DIMENSIONS
7 mm
35 m.
4312 020 36642
Product Specification
CATALOGUE NO.
BLF278