BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 12

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
Fig.14 Input impedance as a function of frequency
Class-AB operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
G p
( )
Z i
= 536
= 536
20
16
12
2
1
0
1
2
8
4
0
150
150
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
= 32 V; I
= 32 V; I
L
L
= 300 W.
= 300 W.
x i
r i
200
200
DQ
DQ
= 2
= 2
250 mA;
250 mA;
f (MHz)
f (MHz)
MGP242
MGP244
250
250
12
handbook, halfpage
Class-AB operation; V
R
Fig.15 Load impedance as a function of frequency
GS
( )
Z L
= 536
2
1
0
150
(series components); typical values per
section.
(per section); P
DS
R L
X L
= 32 V; I
L
= 300 W.
200
DQ
= 2
250 mA;
f (MHz)
Product specification
BLF368
MGP243
250