BLL1214-250,112 NXP Semiconductors, BLL1214-250,112 Datasheet - Page 5

• Manufacturer Part Number: BLL1214-250,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLL1214-250,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 12dB
• Voltage - Rated: 75V
• Current Rating: 45A
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 250W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.06 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 200 C
• Application: L-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W
• Power Gain (typ)@vds: 12(Min)@36VdB
• Frequency (min): 1.2GHz
• Frequency (max): 1.4GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 42(Min)%
• Mounting: Screw
• Mode Of Operation: Pulsed RF Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 400000mW
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2424; 934056925112; BLL1214-250; BLL1214-250

Philips Semiconductors
2003 Aug 29
handbook, halfpage
handbook, halfpage
L-band radar LDMOS transistor
(1) f = 1.2 GHz.
t
Fig.6
t
Fig.8
p
p
= 1 ms; = 10%.
= 1 ms; = 10%.
(dB)
(%)
G p
13
60
40
20
15
14
12
11
10
D
0
1.15
0
Efficiency as function of load power;
typical values.
Power gain and drain efficiency as functions
of frequency; typical values.
(2) f = 1.3 GHz.
1.25
100
G p
(3) f = 1.4 GHz.
D
1.35
200
(1)
(2)
(3)
f (GHz)
P L (W)
MLD862
MLD864
1.45
300
60
50
40
30
20
10
(%)
D
5
handbook, halfpage
handbook, halfpage
(1) f = 1.2 GHz.
t
Fig.7
t
Fig.9
p
p
= 100 s; = 10%.
= 100 s; = 10%.
(dB)
G p
(%)
13
15
14
12
11
10
60
40
20
D
0
1.15
0
Efficiency as function of load power;
typical values.
Power gain and drain efficiency as functions
of frequency; typical values.
(2) f = 1.3 GHz.
1.25
100
(1)
(2)
(3)
G p
D
(3) f = 1.4 GHz.
1.35
200
BLL1214-250
Product specification
f (GHz)
P L (W)
MLD865
MLD863
1.45
300
60
50
40
30
20
10
(%)
D