PD54003-E STMicroelectronics, PD54003-E Datasheet - Page 6

• Manufacturer Part Number: PD54003-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD54003-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 12dB
• Voltage - Rated: 25V
• Current Rating: 4A
• Current - Test: 50mA
• Voltage - Test: 7.5V
• Power - Output: 3W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Drain Source Voltage Vds: 25V
• Continuous Drain Current Id: 4A
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: PowerSO-10RF
• No. Of Pins: 2
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 25V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 12dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.7S
• Input Capacitance (typ)@vds: 59@7.5VpF
• Output Capacitance (typ)@vds: 43@7.5VpF
• Reverse Capacitance (typ): 4@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5295-5

Typical performance
4
6/27
Figure 3.
Figure 5.
1000
100
10
1
0
f = 1 M Hz
Typical performance
Capacitance vs. drain voltage
Gate-source voltage vs. case
temperature
VDD, DRAIN VOLTAGE (V)
5
10
C rss
C oss
Ciss
Doc ID 12235 Rev 2
15
Figure 4.
4
3
2
0
1
1
2
Drain current vs. gate voltage
VGS, GATE-SOURCE VOLTAGE (V)
3
PD54003-E, PD54003S-E
4
5
Vds = 10 V
6