MRF1513NT1 Freescale Semiconductor, MRF1513NT1 Datasheet

IC MOSFET RF N-CHAN PLD-1.5

MRF1513NT1

Manufacturer Part Number
MRF1513NT1
Description
IC MOSFET RF N-CHAN PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1513NT1

Transistor Type
N-Channel
Frequency
520MHz
Gain
15dB
Voltage - Rated
40V
Current Rating
2A
Current - Test
50mA
Voltage - Test
12.5V
Power - Output
3W
Package / Case
PLD-1.5
Configuration
Single Dual Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
31250 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
3W
Power Gain (typ)@vds
15dB
Frequency (max)
520MHz
Package Type
PLD-1.5
Pin Count
3
Input Capacitance (typ)@vds
33@12.5VpF
Output Capacitance (typ)@vds
16.5@12.5VpF
Reverse Capacitance (typ)
2.2@12.5VpF
Operating Temp Range
-65C to 150C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
31250mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MRF1513NT1
MRF1513NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1513NT1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF1513NT1G
Manufacturer:
MICROCHIP
Quantity:
1 001
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
520 MHz, 2 dB Overdrive
Impedance Parameters
7 inch Reel.
Derate above 25°C
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 3 Watts
Power Gain — 15 dB
Efficiency — 65%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
G
Rating
3
D
S
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
Document Number: MRF1513N
260
LATERAL N - CHANNEL
MRF1513NT1
520 MHz, 3 W, 12.5 V
RF POWER MOSFET
CASE 466 - 03, STYLE 1
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
31.25
0.25
± 20
150
PLASTIC
PLD - 1.5
2
4
(2)
Rev. 12, 6/2009
MRF1513NT1
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

Related parts for MRF1513NT1

MRF1513NT1 Summary of contents

Page 1

... BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Symbol Value V - 0.5, +40 DSS V ± 31. +150 stg T 150 J (2) Symbol Value R 4 θJC Package Peak Temperature 260 MRF1513NT1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...

Page 2

... MHz Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts mA 520 MHz) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts mA 520 MHz) DD out DQ MRF1513NT1 2 = 25°C unless otherwise noted) Symbol I DSS I GSS V GS(th) V DS(on) C iss C oss C rss G ps η ...

Page 3

... Microstrip 0.342″ x 0.080″ Microstrip 0.347″ x 0.080″ Microstrip 0.846″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper V = 12.5 Vdc DD 450 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1513NT1 ...

Page 4

... Figure 6. Output Power versus Biasing Current 450 MHz 520 MHz 2 470 MHz 500 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1513NT1 12.5 Vdc Figure 5. Drain Efficiency versus Output Power 70 450 MHz 65 520 MHz 470 MHz 500 MHz 470 MHz ...

Page 5

... Microstrip 0.941″ x 0.080″ Microstrip 0.452″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper V = 12.5 Vdc DD 440 MHz 400 MHz 470 MHz OUTPUT POWER (WATTS) out Figure 12. Input Return Loss versus Output Power MRF1513NT1 ...

Page 6

... I , BIASING CURRENT (mA) DQ Figure 15. Output Power versus Biasing Current 5 400 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1513NT1 400 MHz 12.5 Vdc Figure 14. Drain Efficiency versus Output 70 400 MHz 65 470 MHz 440 MHz 60 440 MHz 55 ...

Page 7

... Microstrip 0.171″ x 0.080″ Microstrip 0.095″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper 135 MHz 155 MHz 175 MHz V = 12.5 Vdc OUTPUT POWER (WATTS) out Figure 21. Input Return Loss versus Output Power MRF1513NT1 ...

Page 8

... I , BIASING CURRENT (mA) DQ Figure 24. Output Power versus Biasing Current 175 MHz 2 155 MHz 135 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 26. Output Power versus Supply Voltage MRF1513NT1 12.5 Vdc Figure 23. Drain Efficiency versus Output 12.5 Vdc 19.5 dBm in 50 ...

Page 9

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1513NT1 9 ...

Page 10

... Figure 1 Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η > Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 29. Series Equivalent Input and Output Impedance MRF1513NT1 10 470 470 f = 400 MHz 135 f = 400 MHz ...

Page 11

... S 22 ∠ φ ∠ φ 0.61 - 137 13 0.64 - 156 5 0.65 - 165 - 7 0.67 - 167 - 11 0.69 - 167 - 9 0.72 - 167 - 26 0.74 - 168 - 14 0.75 - 168 - 23 0.78 - 170 - 31 0.79 - 170 - 17 0.80 - 172 MRF1513NT1 11 ...

Page 12

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1513NT1 12 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 13

... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1513NT1 13 ...

Page 14

... ZONE W 1 É É É É É É É É É É É É É É É É É É É É É É É É ZONE X VIEW MRF1513NT1 14 PACKAGE DIMENSIONS 0.35 (0.89 " NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14 ...

Page 15

... Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 • Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software Device Data Freescale Semiconductor REVISION HISTORY Description value from 150 match Functional Test I DQ specification MRF1513NT1 15 ...

Page 16

... RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1513NT1 Document Number: MRF1513N Rev. 12, 6/2009 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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