BLL1214-35,112 NXP Semiconductors, BLL1214-35,112 Datasheet - Page 5

TRANSISTOR RF LDMOS SOT467C

BLL1214-35,112

Manufacturer Part Number
BLL1214-35,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL1214-35,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
1.2GHz ~ 1.4GHz
Gain
13dB
Voltage - Rated
75V
Current Rating
10µA
Current - Test
50mA
Voltage - Test
36V
Power - Output
35W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Power Dissipation
110 W
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2423
934056924112
BLL1214-35
BLL1214-35
Philips Semiconductors
List of components (see Fig.6)
2002 Sep 27
handbook, full pagewidth
C1, C12
C3
C4, C9
C6, C7
C5, C8
C10
C11
C13, C14
R1
L-band radar LDMOS driver transistor
Shaded areas indicate tuning stubs.
COMPONENT
capacitor
capacitor
capacitor
capacitor
capacitor
capacitor
capacitor
capacitor
chip resistor
C1
DESCRIPTION
C3
C4
Fig.6 Component layout.
C5
R1
C6
5
C7 C8
C9
C10
C11
51 pF
6.8 pF
47 pF
4.7 F/50 V
2.3 nF
2.7 pF
1.0 pF
1.5 pF
82
C14
C13
VALUE
MCE033
C12
ATC100A
ATC100A
ATC100A
475 50k 952
ATC100B
ATC100A
ATC100A
ATC100A
BLL1214-35
Product specification
CATALOGUE NO.

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