PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 4

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

Electrical characteristics
2
2.1
2.2
2.3
4/25
Electrical characteristics
T
Static
Table 4.
Dynamic
Table 5.
Moisture sensitivity level
Table 6.
mismatch
CASE
V
Symbol
Symbol
R
V
(BR)DSS
P
C
C
Load
I
C
G
I
DS(on)
GS(Q)
g
GSS
DSS
h
OUT
OSS
RSS
ISS
FS
PS
D
= +25
V
V
V
V
All phase angles
V
V
V
V
V
V
V
V
V
Static
Dynamic
Moisture sensitivity level
DD
DD
DD
DD
o
GS
GS
GS
DS
GS
DS
GS
GS
GS
C
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 0
= 0
= 20 V
= 28 V
= 10 V
= 10 V
= 0
= 0
= 0
DQ
DQ
DQ
DQ
= 100 mA
= 100 mA, P
= 100 mA, P
= 100 mA, P
V
Test conditions
Test methodology
Test conditions
I
V
V
V
V
I
I
I
Doc ID 12214 Rev 5
DS
D
D
D
DS
DS
DS
DS
DS
= 100 mA
= 1.25 A
= 1 A
J-STD-020B
= 10 mA
= 28 V
= 28 V
= 28 V
= 28 V
= 0 V
OUT
OUT
OUT
= 18 W, f = 945 MHz
= 18 W, f = 945 MHz
= 18 W, f = 945 MHz
f = 945 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
10:1
Min
Min
2.0
18
14
50
65
16.5
Typ
34.5
Typ
53
1.3
21
1
Max
Max
0.76
4.0
PD57018-E
1
1
Rating
MSL 3
VSWR
Unit
Unit
mho
dB
μA
μA
W
pF
pF
pF
%
Ω
V
V