BF556A,215 NXP Semiconductors, BF556A,215 Datasheet - Page 6

• Manufacturer Part Number: BF556A,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF556A,215

• Package / Case: SST3 (SOT-23-3)
• Current Rating: 7mA
• Transistor Type: N-Channel JFET
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: - 0.5 V to - 7.5 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Drain Current (idss At Vgs=0): 3 mA to 7 mA
• Continuous Drain Current: 7 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934021470215::BF556A T/R::BF556A T/R

Philips Semiconductors
9397 750 13393
Product data sheet
Fig 4. Common-source output conductance as a
Fig 6. Typical output characteristics.
(mA)
( S)
(1) V
(2) V
(3) V
G
I
D
os
100
80
60
40
20
0
5
4
3
2
1
0
V
function of gate-source cut-off voltage; typical
values.
BF556A
0
0
DS
GS
GS
GS
= 15 V.
= 0 V.
= 0.5 V.
= 1.0 V.
4
2
8
4
12
6
V
(1)
(2)
(3)
V
GSoff
DS
mrc153
mrc145
(V)
(V)
16
Rev. 03 — 5 August 2004
8
BF556A; BF556B; BF556C
Fig 5. Drain-source on-state resistance as a function
Fig 7. Typical output characteristics.
N-channel silicon junction field-effect transistors
R
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
DSon
( )
I
D
300
200
100
16
12
0
8
4
0
V
of gate-source cut-off voltage; typical values.
BF556B
0
0
DS
GS
GS
GS
GS
GS
GS
= 100 mV; V
= 0 V.
= 0.5 V.
= 1.0 V.
= 1.5 V.
= 2.0 V.
= 2.5 V.
2
4
GS
= 0 V.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
8
12
6
V
(3)
(4)
(5)
(1)
(2)
(6)
V
GSoff
DS
mrc155
mrc146
(V)
(V)
16
8
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