BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 20

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
11. Revision history
Table 14:
9397 750 14254
Product data sheet
Document ID
BF1208_1
Revision history
Release date
20050316
Data sheet status
Product data sheet
Rev. 01 — 16 March 2005
Change notice
-
Dual N-channel dual gate MOSFET
Doc. number
9397 750 14254
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Supersedes
-
BF1208
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