ATF-38143-TR1G Avago Technologies US Inc., ATF-38143-TR1G Datasheet - Page 3

IC PHEMT 1.9GHZ 4.5V 10MA SOT343

ATF-38143-TR1G

Manufacturer Part Number
ATF-38143-TR1G
Description
IC PHEMT 1.9GHZ 4.5V 10MA SOT343
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-38143-TR1G

Gain
16dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
4.5V
Current Rating
145mA
Noise Figure
0.4dB
Current - Test
10mA
Voltage - Test
2V
Power - Output
12dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Drain Source Voltage Vds
4.5V
Power Dissipation Pd
580mW
Noise Figure Typ
0.4dB
Rf Transistor Case
SOT-343
No. Of Pins
4
Frequency Max
6GHz
Frequency Min
450MHz
Drain Current Idss Max
145mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-38143-TR1G
Manufacturer:
AVAGO
Quantity:
3 000
Part Number:
ATF-38143-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 6 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
off between an optimal noise match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from
actual measurements.
3
ATF-38143 Electrical Specifications
Symbol
I
g
OIP3
V
I
P
dss
IIP3
GDO
I
NF
G
P
m
gss
I
1dB
d
[1]
a
[1]
[1]
Transmission Line
(0.5 dB loss)
50 Ohm
Parameters and Test Conditions
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
Input 3
Intercept Point
1 dB Compressed
Compressed Power
rd
Order
rd
Order
[3]
[3]
[3]
Matching Circuit
Γmag = 0.380
(0.46 dB loss)
Γang = 58.2°
[3]
T
Input
A
V
= 25°C, RF parameters measured in a test circuit for a typical device
DS
= 1.5 V, I
V
V
DS
GS
V
= 1.5 V, g
= -0.54 V, V
DS
= 1.5 V, V
V
DS
GD
= 10% of I
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
= V
m
V
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
= I
GD
GS
GS
DS
DUT
= -5 V
= -4 V
dss
= 0 V
= 2 V
/V
dss
P
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
V
V
V
V
DS
DS
DS
DS
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Matching Circuit
Γmag = 0.336
(0.46 dB loss)
Γang = 34.5°
1dB
Output
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
, and OIP3 measurements. This circuit represents a trade-
DS
DS
DS
DS
= 10 mA
= 20 mA
= 10 mA
= 20 mA
= 10 mA
= 20 mA
= 10 mA
= 20 mA
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 5 mA
= 5 mA
= 5 mA
= 5 mA
Transmission Line
mmho 180
Units
dBm
dBm
dBm
dBm
dBm
dBm
mA
mA
µA
µA
dB
dB
dB
dB
(0.5 dB loss)
V
50 Ohm
-0.65
18.5
Min.
90
15
Typ.
15.3
16.0
17.0
17.0
19.0
20.5
22.0
22.0
12.0
12.0
-0.5
118
230
0.6
0.4
0.3
0.6
0.4
0.3
6.0
3.0
10
30
[2]
Output
-0.35
Max.
0.85
145
500
300
18

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