ATF-531P8-TR1 Avago Technologies US Inc., ATF-531P8-TR1 Datasheet

IC PHEMT 2GHZ 4V 135MA 8-LPCC

ATF-531P8-TR1

Manufacturer Part Number
ATF-531P8-TR1
Description
IC PHEMT 2GHZ 4V 135MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-531P8-TR1

Gain
20dB
Package / Case
8-LPCC
Current Rating
300mA
Power - Output
24.5dBm
Frequency
2GHz
Transistor Type
pHEMT FET
Noise Figure
0.6dB
Current - Test
135mA
Voltage - Test
4V
Power Dissipation Pd
1W
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Noise Figure Typ
0.6dB
Frequency Min
50MHz
Continuous Drain Current Id
3.7µA
Drain Current Idss Max
135mA
Drain Source Voltage Vds
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-531P8-TR1
Manufacturer:
AVAGO
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20 702
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ATF-531P8-TR1
Manufacturer:
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Quantity:
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Part Number:
ATF-531P8-TR1G
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Part Number:
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High Linearity Enhancement Mode
in 2x2 mm
Data Sheet
Description
Avago Technologies’ ATF‑531P8 is a single‑voltage high
linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑
standard leadless plastic chip carrier (LPCC
The device is ideal as a high linearity, low‑noise, medium‑
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Notes:
1. Enhancement mode technology employs a single positive V
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP‑N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
depletion mode devices.
Pin 7 (Drain)
Pin 1 (Source)
Pin 4 (Source)
Pin 2 (Gate)
Pin 8
Pin 6
Pin 5
Pin 3
2
LPCC
Bottom View
[3]
Top View
3Px
Package
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
[1]
Pseudomorphic HEMT
[3]
) package.
gs
, eliminating the need of negative gate voltage associated with conventional
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
• Point MTTF > 300 years
• MSL‑1 and lead‑free
• Tape‑and‑reel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM
• 24.5 dBm output power at 1 dB gain compression
Applications
• Front‑end LNA Q1 and Q2 driver or pre‑driver ampli‑
• Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
• General purpose discrete E‑pHEMT for other high
fier for Cellular/PCS and WCDMA wireless infrastruc‑
ture
plications
linearity applications
2.0 x 2.0 x 0.75 mm
[4]
[2]

Related parts for ATF-531P8-TR1

ATF-531P8-TR1 Summary of contents

Page 1

... Data Sheet Description Avago Technologies’ ATF‑531P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC The device is ideal as a high linearity, low‑noise, medium‑ power amplifier. Its operating frequency range is from 50 MHz to 6 GHz ...

Page 2

... ATF-531P8 Absolute Maximum Ratings Symbol Parameter V Drain–Source Voltage [ Gate–Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current GS P Total Power Dissipation diss P RF Input Power in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [4] ch_b 400 0.9 V 300 ...

Page 3

... ATF-531P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [1] G Gain [1] OIP3 ...

Page 4

Ohm 3.3 pF .02 λ RF Input Ohm 100 pF Gate DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. ...

Page 5

... ATF-531P8 Typical Performance Curves (at 5°C unless specified otherwise) Tuned for Optimal OIP3 105 120 135 150 165 180 I (mA) ds Figure 8. OIP3 vs. I and V at 900 MHz 105 120 135 150 165 180 I (mA) ds Figure 11. Small Signal Gain vs. I and 900 MHz ...

Page 6

... ATF-531P8 Typical Performance Curves, continued (at 5°C unless specified otherwise) Tuned for Optimal OIP3 105 120 135 150 165 180 I (mA) dq Figure 17. PAE vs. I and V at 900 MHz 105 120 135 150 165 180 I (mA) ds Figure 20. OIP3 vs. I and V at 5.8 GHz. ...

Page 7

... ATF-531P8 Typical Performance Curves (at 5°C unless specified otherwise) Tuned for Optimal OIP3, continued -40°C 25 25°C 85°C 20 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 24. OIP3 vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA -40°C 25°C 10 85° ...

Page 8

... ATF-531P8 Typical Scattering Parameters at 5°C, V Freq GHz Mag. Ang. dB 0.1 0.626 ‑59.4 33.20 45.702 0.2 0.704 ‑97.4 31.41 37.192 0.3 0.761 ‑119.4 29.53 29.950 0.4 0.794 ‑133.8 27.78 24.477 0.5 0.815 ‑142.5 26.32 20.693 0.6 0.824 ‑149.6 24.99 17.760 0.7 0.834 ‑ ...

Page 9

... ATF-531P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.812 ‑56.4 34.07 50.547 0.2 0.820 ‑94.6 31.95 39.582 0.3 0.834 ‑117.3 29.87 31.147 0.4 0.842 ‑132.4 27.99 25.104 0.5 0.846 ‑141.4 26.46 21.036 0.6 0.849 ‑148.7 25.08 17.954 0.7 0.853 ‑154.4 23 ...

Page 10

... ATF-531P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.930 ‑51.3 33.70 48.399 0.2 0.889 ‑88.3 31.65 38.230 0.3 0.876 ‑111.6 29.58 30.121 0.4 0.867 ‑127.3 27.71 24.294 0.5 0.862 ‑137.0 26.18 20.379 0.6 0.858 ‑144.7 24.81 17.405 0.7 0.857 ‑151.0 23 ...

Page 11

... ATF-531P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.805 ‑56.0 34.11 50.734 0.2 0.815 ‑94.0 32.03 39.967 0.3 0.831 ‑116.9 29.97 31.517 0.4 0.839 ‑131.7 28.10 25.418 0.5 0.844 ‑140.9 26.58 21.322 0.6 0.846 ‑148.3 25.20 18.207 0.7 0.850 ‑154.0 24 ...

Page 12

... ATF-531P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.823 ‑57.1 33.96 49.888 0.2 0.826 ‑95.6 31.82 38.989 0.3 0.842 ‑118.2 29.66 30.415 0.4 0.846 ‑133.1 27.75 24.416 0.5 0.851 ‑142.0 26.21 20.452 0.6 0.850 ‑149.2 24.83 17.443 0.7 0.855 ‑154.9 23 ...

Page 13

... Device Models Refer to Avago Technologies' Web Site www.avagotech.com/rf Ordering Information Part Number No. of Devices ATF‑531P8‑TR1 3000 ATF‑531P8‑TR2 10000 ATF‑531P8‑BLK 100  x  LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 Bottom View Side View DIMENSIONS SYMBOL MIN. NOM. MAX. ...

Page 14

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Device Orientation REEL USER FEED ...

Page 15

Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

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