ATF-501P8-TR2 Avago Technologies US Inc., ATF-501P8-TR2 Datasheet

IC PHEMT 2GHZ 4.5V 280MA 8-LPCC

ATF-501P8-TR2

Manufacturer Part Number
ATF-501P8-TR2
Description
IC PHEMT 2GHZ 4.5V 280MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-501P8-TR2

Gain
15dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1dB
Current - Test
280mA
Voltage - Test
4.5V
Power - Output
29dBm
Package / Case
8-LPCC
Drain Source Voltage Vds
4.5V
Continuous Drain Current Id
1A
Power Dissipation Pd
3.5W
Noise Figure Typ
1dB
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Frequency Min
50MHz
Drain Current Idss Max
280mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-501P8-TR2
Manufacturer:
AVAGO
Quantity:
3 820
Part Number:
ATF-501P8-TR2
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-501P8-TR2G
Manufacturer:
AVAGO
Quantity:
10 000
ATF-501P8
High Linearity Enhancement Mode
in 2x2 mm
Data Sheet
Description
Avago Technologies’s ATF-501P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC
The device is ideal as a medium-power amplifier. Its
operating frequency range is from 400 MHz to 3.9 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85ºC. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive V
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias
Pin Connections and Package Marking
Pin 1 (Source)
Pin 4 (Source)
Note:
Package marking provides orientation and identification:
“0P” = Device Code
“x” = Date code indicates the month of manufacture.
Pin 7 (Drain)
Pin 2 (Gate)
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
power.
Pin 8
Pin 6
Pin 5
Pin 3
2
Bottom View
LPCC
Top View
0Px
[3]
Package
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
[1]
Pseudomorphic HEMT
[3]
) package.
gs
,
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specifications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain compression
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM
• 65% PAE
• 23
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver
• Driver Amplifier for WLAN, WLL/RLL and MMDS
• General purpose discrete E-pHEMT for other high
Amplifier for Cellular/PCS and WCDMA wireless
infrastructure
applications
linearity applications
o
C/W thermal resistance
[4]
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
[2]
3

Related parts for ATF-501P8-TR2

ATF-501P8-TR2 Summary of contents

Page 1

... Package 2 [3] Data Sheet Description Avago Technologies’s ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC- standard leadless plastic chip carrier (LPCC The device is ideal as a medium-power amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz. ...

Page 2

... ATF-501P8 Absolute Maximum Ratings Symbol Parameter V Drain–Source Voltage [ Gate–Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current GS P Total Power Dissipation diss P RF Input Power in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance [4] ch_b Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA 800 Vgs=0 ...

Page 3

... ATF-501P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [1] G Gain ...

Page 4

Ohm 1.2 pF .02 RF Input Ohm 2.2 µF Gate Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line ...

Page 5

... ATF-501P8 Typical Performance Curves Tuned for Optimal OIP3 at 4.5V 280 mA 55 4.5V 5. 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 8. OIP3 vs. Idq and Vds at 2 GHz 4.5V 5.5V 20 3.5V 15 200 240 280 320 360 400 440 480 520 560 600 ...

Page 6

... ATF-501P8 Typical Performance Curves Tuned for Optimal P1dB at 4.5V 280 mA 55 4.5V 5. 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 16. OIP3 vs. Idq and Vds at 2 GHz 4.5V 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 ...

Page 7

... ATF-501P8 Typical Performance Curves Tuned for Optimum OIP3 at 4.5V 280 -40C 25C 85C 10 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 24. OIP3 vs. Temperature and Frequency at Optimal OIP3 -40C 25C 85C 20 15 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 27. P1dB vs. Temperature and Frequency at Optimal P1dB ...

Page 8

... ATF-501P8 Typical Performance Curves Tuned for Optimal OIP3 at 4.5V 400 mA 55 4.5V 50 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 32. OIP3 vs. Ids and Vds at 2 GHz 4.5V 20 5.5V 3.5V 15 200 240 280 320 360 400 440 480 520 560 600 ...

Page 9

... ATF-501P8 Typical Performance Curves, Tuned for Optimal OIP3 at 4.5V 400 -40C 25C 85C 10 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 41. OIP3 vs. Temperature and Frequency at optimum P1dB -40C 25C 85C 5 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 44. Gain vs. Temperature and Frequency at optimum OIP3 ...

Page 10

... ATF-501P8 Typical Performance Curves, Tuned for Optimal P1dB at 4.5V 400 4.5V 5.5V 3. 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 50. P1dB vs. Ids and Vds at 2 GHz 4.5V 5.5V 10 3.5V 5 200 240 280 320 360 400 440 480 520 560 600 ...

Page 11

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.915 -132.3 31.6 0.2 0.911 -156.2 26.2 0.3 0.910 -165.4 22.8 0.4 0.910 -170.9 20.3 0.5 0.908 -173.4 18.7 0.6 0.907 -176.1 17.1 0.7 0.908 -178.5 15.8 0.8 0.905 179.8 14.7 0.9 ...

Page 12

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.922 -131.5 31.1 0.2 0.914 -155.7 25.7 0.3 0.914 -165.2 22.3 0.4 0.911 -170.5 19.8 0.5 0.911 -173.3 18.3 0.6 0.912 -176.0 16.7 0.7 0.910 -178.3 15.4 0.8 0.910 179.9 14.2 0.9 ...

Page 13

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.911 -132.8 31.6 0.2 0.910 -156.5 26.2 0.3 0.911 -165.8 22.8 0.4 0.913 -171.1 20.3 0.5 0.907 -173.7 18.7 0.6 0.910 -176.3 17.2 0.7 0.910 -178.6 15.8 0.8 0.906 179.7 14.7 0.9 ...

Page 14

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.923 -133.9 30.6 0.2 0.922 -157.1 25.2 0.3 0.920 -166.1 21.8 0.4 0.920 -171.3 19.3 0.5 0.915 -173.9 17.7 0.6 0.917 -176.5 16.2 0.7 0.917 -178.9 14.8 0.8 0.915 179.6 13.6 0.9 ...

Page 15

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.924 -132.7 30.5 0.2 0.919 -156.5 25.0 0.3 0.918 -165.7 21.7 0.4 0.918 -171.0 19.2 0.5 0.918 -173.6 17.6 0.6 0.915 -176.2 16.0 0.7 0.915 -178.5 14.7 0.8 0.914 179.8 13.5 0.9 ...

Page 16

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.919 -134.2 30.8 0.2 0.920 -157.3 25.3 0.3 0.921 -166.4 21.9 0.4 0.918 -171.4 19.4 0.5 0.915 -174.0 17.8 0.6 0.916 -176.7 16.3 0.7 0.916 -178.9 15.0 0.8 0.914 179.4 13.8 0.9 ...

Page 17

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.914 -131.5 31.8 0.2 0.912 -155.7 26.4 0.3 0.914 -165.2 23.1 0.4 0.913 -170.5 20.6 0.5 0.909 -173.3 19.0 0.6 0.910 -176.0 17.4 0.7 0.911 -178.2 16.1 0.8 0.908 -179.8 14.9 0.9 ...

Page 18

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.921 -130.1 31.8 0.2 0.914 -155.0 26.4 0.3 0.914 -164.6 23.0 0.4 0.913 -170.1 20.5 0.5 0.909 -172.9 18.9 0.6 0.909 -175.7 17.4 0.7 0.909 -178.1 16.0 0.8 0.908 -179.7 14.9 0.9 ...

Page 19

... ATF-501P8 Typical Scattering Parameters, Freq GHz Mag. Ang. dB 0.1 0.904 -132.0 31.8 0.2 0.910 -156.2 26.4 0.3 0.912 -165.4 23.0 0.4 0.912 -170.7 20.5 0.5 0.907 -173.5 18.9 0.6 0.909 -176.1 17.4 0.7 0.909 -178.3 16.0 0.8 0.907 179.9 14.9 0.9 ...

Page 20

... Device Models Refer to Avago’s Web Site www.Avagotech.com/view/rf Ordering Information Part Number No. of Devices ATF-501P8-TR1 3000 ATF-501P8-TR2 10000 ATF-501P8-BLK 100 LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 Bottom View End View DIMENSIONS SYMBOL MIN. NOM. A 0.70 0. 0.02 A2 0.203 REF 0.203 REF 0.203 REF b 0 ...

Page 21

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) 0.25 (9.84) PIN 1 f0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Notes: Typical stencil ...

Page 22

Tape Dimensions Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

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