NE5520379A-T1A-A CEL, NE5520379A-T1A-A Datasheet

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NE5520379A-T1A-A

Manufacturer Part Number
NE5520379A-T1A-A
Description
MOSFET LD N-CHAN 3.2V 79A
Manufacturer
CEL
Datasheet

Specifications of NE5520379A-T1A-A

Transistor Type
LDMOS
Frequency
915MHz
Gain
16dB
Voltage - Rated
15V
Current Rating
1.5A
Voltage - Test
3.2V
Power - Output
35.5dBm
Package / Case
79A
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
15 V
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
1.5 A
Power Dissipation
20 W
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
2.5 S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DESCRIPTION
NEC's NE5520379A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.2 V GSM900 handsets. Die are manufactured using NEC's
NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOS-
FET) and housed in a surface mount package. This device
can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or
34.6 dBm output power at 2.8 V by varying the gate voltage
as a power control function.
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7
ELECTRICAL CHARACTERISTICS
Note:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
V
reject for several samples.
DS
= 3.2 V, f = 915 MHz
SYMBOLS
BV
P
η
P
η
R
I
I
V
GSS
gm
G
η
G
η
DSS
OUT
ADD
OUT
ADD
I
I
TH
D
D
TH
DSS
D
D
L
L
MEDIUM POWER SILICON LD-MOSFET
Output Power
Linear Gain (at P
Drain Efficiency
Power Added Efficiency
Operating Drain Current
Output Power
Linear Gain (at P
Operating Drain Current
Drain Efficiency
Power Added Efficiency
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
PACKAGE OUTLINE
PART NUMBER
CHARACTERISTICS
IN
IN
= +10 dBm)
= +10 dBm)
x
5.7
NEC'
x
1.1 mm MAX
(T
S
A
= 25°C)
3.2 V, 3 W, L/S BAND
UNITS
°C/W
dBm
dBm
mA
dB
dB
nA
nA
%
%
%
%
V
S
V
A
MIN
31.0
1.0
29
15
NE5520379A
OUTLINE DIMENSIONS
APPLICATIONS
• DIGITAL CELLULAR PHONES:
• OTHERS:
3.2 V GSM900/DCS 1800 Dual Band Handsets
Two-Way Pagers
Retail Business Radio
Special Mobile Radio
Short Range Wireless
35.5
16.0
33.0
1.35
79A
TYP
750
1.0
8.5
2.5
68
65
38
35
20
Gate
California Eastern Laboratories
4.2 MAX.
5.7 MAX.
MAX
Source
100
100
2.0
5
0.4±0.15
PACKAGE OUTLINE 79A
Drain
V
DS
= 3.5 V, I
f = 1785 MHz, V
f = 915 MHz, V
V
TEST CONDITIONS
DS
V
GS
Channel-to-Case
NE5520379A
= 3.5 V, I
I
(Units in mm)
V
V
DSS
= 2.5 V(RF OFF)
DS1 =
V
Gate
GS
DS
(NOTE 1)
(NOTE 1)
GS
= 10 µA
= 6.0 V
= 8.5 V
= 2.5 V
0.8 A, I
(Bottom View)
DS =
DS
1.5±0.2
3.6±0.2
Source
DS
= 3.2 V,
= 3.2 V,
1 mA
DS2 =
0.8 MAX.
Drain
1.0 A

Related parts for NE5520379A-T1A-A

NE5520379A-T1A-A Summary of contents

Page 1

... CLASS AB OPERATION • SURFACE MOUNT PACKAGE: 5.7 DESCRIPTION NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOS- FET) and housed in a surface mount package ...

Page 2

... Channel Temperature CH T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle ≤ 50%, Ton ≤ ORDERING INFORMATION PART NUMBER NE5520379A-T1A-A TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4.0 3.6 V 3.4 V 3.5 3.0 2.5 2.0 1 ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER (460 MHz 3 150 mA Dset f = 460 MHz P out ...

Page 4

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 3 out f = 915 MHz dBm 0.0 1.0 2.0 3.0 ...

Page 5

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE5520379A 300 FREQUENCY S 11 GHz MAG ANG 0.10 0.91 -166.00 0.15 0.91 -171.34 0.20 0.91 -174.19 0.25 0.91 -176 ...

Page 6

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE5520379A 600 FREQUENCY S 11 GHz MAG ANG 0.10 0.93 -166.51 0.15 0.93 -171.79 0.20 0.93 -174.68 0.25 0.93 -176 ...

Page 7

... APPLICATION CIRCUIT (900 MHz C11 P1 GND C12 C13 C14 U1 100637 NE55XXX79A-EV SOURCE DRAIN GATE + 4.7uF 0.1uF 1000pF 10pF RF Input NE5520379A PARTS LIST 1 TF-100637 4 2 MA101J C2 MCR03J512 R1 2 MCH185A180JK C4 MCH185A4R7CK C14 2 MCH185A100DK C1 MCH185A8R2DK C6 2 TAJB475K010R C12, C13 2 GRM40X7R104K025BL C10, C11 2 GRM40C0G102J050BD C8 NE5520379A U1 1 703401 ...

Page 8

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 9

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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