BLS6G2731-6G,112 NXP Semiconductors, BLS6G2731-6G,112 Datasheet - Page 9

TRANS S-BAND PWR LDMOS SOT975C

BLS6G2731-6G,112

Manufacturer Part Number
BLS6G2731-6G,112
Description
TRANS S-BAND PWR LDMOS SOT975C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G2731-6G,112

Transistor Type
LDMOS
Frequency
2.7GHz ~ 3.1GHz
Gain
15dB
Voltage - Rated
60V
Current Rating
3.5A
Current - Test
25mA
Voltage - Test
32V
Power - Output
6W
Package / Case
SOT957C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
934061749112
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G2731-6G_1
Product data sheet
Document ID
BLS6G2731-6G_1
Revision history
Table 10.
Acronym
LDMOS
RF
S-Band
SMD
VSWR
Abbreviations
Release date
20090219
Rev. 01 — 19 February 2009
Description
Laterally Diffused Metal-Oxide Semiconductor
Radio Frequency
Short wave Band
Surface Mounted Device
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
LDMOS S-Band radar power transistor
Change notice
-
BLS6G2731-6G
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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