BLA1011-300,112 NXP Semiconductors, BLA1011-300,112 Datasheet
BLA1011-300,112
Specifications of BLA1011-300,112
BLA1011-300
BLA1011-300
Related parts for BLA1011-300,112
BLA1011-300,112 Summary of contents
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... BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. RF performance Mode of operation Pulsed class-AB CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... Limiting values Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Parameter transient thermal impedance from junction to heatsink Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors Simplified outline Symbol 1 3 [1] 2 Conditions Min Max - 65 ...
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... forward transconductance drain-source on-state GS(th) resistance Application information = Parameter Conditions output power power gain P input return loss P drain efficiency P rise time P fall time P pulse droop power P Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors Min Typ = 3. 375 mA 5.2 5 150 =13 ...
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... NXP Semiconductors Table 8. f MHz 1030 1060 1090 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLA1011-300 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 150 mA (%) 60 (1) 40 (2) ( 100 200 ( 1030 MHz ( 1060 MHz ( 1090 MHz BLA1011-300 in a wideband circuit ...
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... NXP Semiconductors 400 P L (W) 300 200 100 ( 1030 MHz ( 1060 MHz ( 1090 MHz BLA1011-300 in a wideband circuit 150 mA Fig 4. Load power as a function of input power; typical values BLA1011-300_2 Product data sheet 001aag192 G (dB) (3) ( Fig 5. Power gain and drain efficiency as functions of Rev. 02 — ...
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... SMD resistor Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors C8 C9 C12 6.2 F/m; height = 0.64 mm. r ...
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... American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLA1011-300_2 Product data sheet List of components (see Figure metal film resistor stripline stripline stripline stripline stripline stripline stripline stripline Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors 6) …continued Value Remarks 49 1. ...
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... REFERENCES JEDEC JEITA Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors 3.38 1.70 34.16 9.91 27.94 3 ...
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... Traffic Collision Avoidance System Voltage Standing-Wave Ratio Data sheet status Product data sheet 1: added RoHS compliance statement Section 8 “Test information” on page Product data sheet Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors Change notice Supersedes - BLA1011-300_1 © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 5 February 2008 BLA1011-300 Avionics LDMOS transistors © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 5 February 2008 Document identifier: BLA1011-300_2 ...