MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 6

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

MW6S010NR1 MW6S010GNR1
6
19
18
17
16
15
0
Figure 10. Power Gain versus Output Power
2
P
out
4
, OUTPUT POWER (WATTS) CW
6
8
50
40
30
20
10
20
19
18
17
16
15
0
V
0.1
0.1
DD
10
T
= 24 V
25_C
Figure 8. Single - Carrier CDMA ACPR, Power
85_C
TYPICAL CHARACTERISTICS
C
G
V
I
f = 945 MHz
= −30_C
DQ
ps
DD
Figure 9. Power Gain and Power Added
= 125 mA
= 28 Vdc
Gain and Power Added Efficiency
12
Efficiency versus Output Power
28 V
I
f = 945 MHz
DQ
P
P
out
= 125 mA
out
14
, OUTPUT POWER (WATTS) AVG.
versus Output Power
, OUTPUT POWER (WATTS) CW
1
32 V
G
η
ps
D
16
1
−30_C
24
20
16
12
8
4
0
500
ACPR
Figure 11. Broadband Frequency Response
10
V
P
I
DQ
DD
out
600
η
— 900 MHz
D
= 125 mA
= 28 Vdc
= 10 W CW
V
I
f = 945 MHz
DQ
DD
25_C
700
= 125 mA
= 28 Vdc
85_C
f, FREQUENCY (MHz)
100
800
10
−10
−20
−30
−40
−50
−60
50
40
30
20
10
0
900
S11
S21
1000
Freescale Semiconductor
1100
RF Device Data
1200
5
0
−5
−10
−15
−20
−25