MRF1535NT1 Freescale Semiconductor, MRF1535NT1 Datasheet
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MRF1535NT1
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MRF1535NT1 Summary of contents
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... PLASTIC MRF1535NT1 CASE 1264A - 03, STYLE 272 - 6 PLASTIC MRF1535FNT1 Symbol Value V - 0.5, +40 DSS V ± 135 D 0. +150 stg T 200 J (2) Symbol Value R 0.90 θJC Package Peak Temperature 260 MRF1535NT1 MRF1535FNT1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...
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... RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1535NT1 MRF1535FNT1 2 = 25°C unless otherwise noted) Symbol 520 MHz f = 520 MHz Min Typ Max 60 — — (BR)DSS I — — ...
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... Microstrip 0.250″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip ® Glass Teflon , 31 mils 155 MHz 135 MHz 175 MHz V = 12.5 Vdc OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 RF OUTPUT N2 C20 C19 60 3 ...
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... I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 155 MHz 135 MHz Figure 5. Drain Efficiency versus Output Power 12.5 Vdc DD P ...
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... Microstrip 0.120″ x 0.223″ Microstrip 1.380″ x 0.080″ Microstrip 0.625″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 450 MHz 470 MHz 520 MHz 500 MHz OUTPUT POWER (WATTS) out MRF1535NT1 MRF1535FNT1 V DD C22 RF OUTPUT 60 5 ...
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... BIASING CURRENT (mA) DQ Figure 15. Output Power versus Biasing Current 450 MHz 40 470 MHz 30 500 MHz 520 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1535NT1 MRF1535FNT1 12.5 Vdc 500 MHz Figure 14. Drain Efficiency versus Output Power 80 70 520 MHz 60 ...
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... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1535NT1 MRF1535FNT1 7 ...
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... Z = Complex conjugate of source in impedance Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 20. Series Equivalent Input and Output Impedance MRF1535NT1 MRF1535FNT1 135 MHz = 12 out Ω ...
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... S 22 ∠ φ ∠ φ 0.89 - 177 4 0.89 - 177 7 0.89 - 177 17 0.90 - 176 40 0.90 - 175 35 0.91 - 175 57 0.92 - 174 50 0.93 - 173 68 0.93 - 173 99 0.94 - 173 78 0.93 - 175 92 0.92 - 174 MRF1535NT1 MRF1535FNT1 9 ...
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... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1535NT1 MRF1535FNT1 10 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...
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... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1535NT1 MRF1535FNT1 11 ...
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... MRF1535NT1 MRF1535FNT1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 13 ...
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... MRF1535NT1 MRF1535FNT1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 15 ...
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... MRF1535NT1 MRF1535FNT1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF1535NT1 MRF1535FNT1 17 ...
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... Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes • Added Electromigration MTTF Calculator availability to Product Software MRF1535NT1 MRF1535FNT1 18 REVISION HISTORY Description ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF1535NT1 MRF1535FNT1 19 ...