MRF6VP3450HR6 Freescale Semiconductor, MRF6VP3450HR6 Datasheet - Page 2

• Manufacturer Part Number: MRF6VP3450HR6
• Description: MOSFET RF N-CH 450W NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
MTTF calculators by product.
Select Documentation/Application Notes -- AN1955.
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 50 mA, V
= 5 Vdc, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
(4)
GS
DS
D
D
D
(3)
(In Freescale Broadband Test Fixture, 50 ohm system) V
GS
GS
= 0 Vdc)
= 320 μAdc)
= 1400 mAdc, Measured in Functional Test)
= 1.58 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(3)
(4)
(3,5)
(3)
Characteristic
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
V
Symbol
V
V
V
ACPR
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
GSS
DSS
DSS
= 50 Vdc, I
η
oss
rss
iss
ps
D
Symbol
DQ
R
Z
21.5
Min
110
26
—
—
—
—
—
—
—
—
—
θJC
θJC
1
2
= 1400 mA, P
0.25
0.92
54.5
22.5
Typ
373
--62
1.6
2.6
28
—
—
—
—
--4
1B (Minimum)
IV (Minimum)
B (Minimum)
out
Value
= 90 W Avg., f = 860 MHz,
Class
Freescale Semiconductor
0.27
0.25
0.04
(1,2)
Max
24.5
--59
2.5
3.5
10
10
10
—
—
—
—
—
—
--2
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
pF
%