MRF6V14300HR5 Freescale Semiconductor, MRF6V14300HR5 Datasheet - Page 5

• Manufacturer Part Number: MRF6V14300HR5
• Description: MOSFET RF N-CH 50V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V14300HR5

• Transistor Type: N-Channel
• Frequency: 1.4GHz
• Gain: 18dB
• Voltage - Rated: 100V
• Current Rating: 10µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 330W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
1000
100
22
21
20
19
18
17
0.1
24
22
20
18
16
10
Figure 3. Capacitance versus Drain- -Source Voltage
1
50
50
Figure 5. Pulsed Power Gain and Drain Efficiency
0
300 mA
150 mA
I
V
Pulse Width = 300 μsec, Duty Cycle = 12%
DQ
DD
= 600 mA
= 50 Vdc, f = 1400 MHz
Figure 7. Pulsed Power Gain versus
C
rss
10
P
P
V
out
out
450 mA
DS
C
C
oss
, OUTPUT POWER (WATTS) PULSED
iss
, OUTPUT POWER (WATTS) PULSED
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
Pulse Width = 300 μsec, Duty Cycle = 12%
versus Output Power
DD
100
100
= 50 Vdc, I
Measured with ±30 mV(rms)ac @ 1 MHz
V
Output Power
GS
20
G
= 0 Vdc
ps
η
D
DQ
= 150 mA, f = 1400 MHz
30
TYPICAL CHARACTERISTICS
40
400
400
50
65
55
45
35
25
160
140
120
100
59
58
57
56
55
54
53
52
51
50
49
48
47
22
21
20
19
18
17
16
15
80
60
40
20
0
27
50
0
I
Pulse Width = 300 μsec
Duty Cycle = 12%
DQ
P1dB = 54.77 dBm (300 W)
V
f = 1200 MHz, Pulse Width = 300 μsec
= 150 mA, f = 1400 MHz
DD
2
Figure 6. Pulsed Output Power versus
Figure 8. Pulsed Power Gain versus
= 50 Vdc, I
29
P3dB = 55.30 dBm (339 W)
Figure 4. Safe Operating Area
P
4
out
P
, OUTPUT POWER (WATTS) PULSED
in
, INPUT POWER (dBm) PULSED
DQ
MRF6V14300HR3 MRF6V14300HSR3
6
V
100
31
DD
= 150 mA
V
Pulse Width = 300 μsec, Duty Cycle = 12%
Output Power
= 30 V
Input Power
DD
DUTY CYCLE (%)
P
8
out
= 50 Vdc, I
= 330 W
33
10
DQ
35 V
12
= 150 mA, f = 1400 MHz
35
P
out
14
40 V
= 300 W
P
Ideal
16
out
45 V
37
= 270 W
Actual
18
50 V
400
39
20
5