BF 1005S E6327 Infineon Technologies, BF 1005S E6327 Datasheet - Page 4

• Manufacturer Part Number: BF 1005S E6327
• Description: MOSFET N-CH 8V 25MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 1005S E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 22dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.6dB
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 22@5VdB
• Noise Figure (max): 2.1dB
• Frequency (max): 1GHz
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.3S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF1005SE6327XT; SP000010949

Total power dissipation P
BF1005S, BF1005SR
Drain current I
mW
mA
220
180
160
140
120
100
80
60
40
20
20
16
14
12
10
0
8
6
4
2
0
0
0
15
0.5
30
1
D
45
=
1.5
60
(V
2
G2S
75
2.5
)
90 105 120 °C
tot
3
= (T
3.5
S
)
T
V
V
S
G2S
150
4.5
4
Total power dissipation P
BF1005SW
Insertion power gain
|S
21
mA
|² =
220
180
160
140
120
100
dB
-15
-25
-35
-45
-55
-65
80
60
40
20
15
-5
0
0
0
(V
15
0.5
G2S
30
1
)
45
1.5
60
2
75
2.5
90 105 120 °C
tot
3
BF1005S...
= (T
2007-04-20
3.5
S
)
T
V
V
S
G2S
150
4.5