BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 7

• Manufacturer Part Number: BG 5120K E6327
• Description: MOSFET N-CH DUAL 8V 20MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5120K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 20mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.02 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000292148

AGC characteristic AGC = ƒ(V
V
Crossmodulation V
V
DS
DS
dBµV
dB
115
105
100
= 5 V, R
= 5 V, I
55
45
40
35
30
25
20
15
10
95
90
85
5
0
0
0
5
0.5
D
GG
10
= 14 mA
1
= 120 kΩ, f = 45 MHz
15
1.5
20
unw
25
2
= (AGC)
30
2.5
35
G2S
3
40 dB
)
V
V
AGC
G2S
50
4
7
AGC characteristic AGC = ƒ(V
V
DS
dB
= 5 V, R
50
40
35
30
25
20
15
10
5
0
0
0.5
GG
1
= 120 kΩ, f = 800 MHz
1.5
2
2.5
BG5120K
2009-10-01
G2S
3
)
V
V
G2S
4