PRF949,115 NXP Semiconductors, PRF949,115 Datasheet - Page 11

• Manufacturer Part Number: PRF949,115
• Description: TRANSISTOR NPN 10V 9GHZ SOT416
• Manufacturer: NXP Semiconductors

Specifications of PRF949,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 1GHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 100 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2085-2; 934055908115; PRF949 T/R

Philips Semiconductors
PACKAGE OUTLINE
2000 Apr 03
Plastic surface mounted package; 3 leads
UHF wideband transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT416
0.95
0.60
A
max
0.1
A 1
1
0.30
0.15
b p
IEC
e 1
0.25
0.10
c
D
e
1.8
1.4
b p
3
D
JEDEC
0.9
0.7
E
2
REFERENCES
e
1
w
0
B
M
B
0.5
e
1
SC-75
scale
EIAJ
11
0.5
v
1.75
1.45
M
H
E
A
0.45
0.15
1 mm
L
p
A
A 1
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
w
PROJECTION
EUROPEAN
L p
A
Product specification
Q
c
X
ISSUE DATE
PRF949
97-02-28
SOT416