BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet - Page 8

• Manufacturer Part Number: BFR92A,215
• Description: TRANS NPN 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR92A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 40
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1650-2; 933551560215; BFR92A T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
C
C
= 14 mA; V
= 14 mA; V
CE
CE
= 10 V; Z
= 10 V; T
Fig.18 Common emitter forward transmission coefficient (S
Fig.17 Common emitter input reflection coefficient (S
o
amb
= 50 ; T
= 25 C.
180
j
j
0
150
amb
0.2
0.2
150
= 25 C.
0.5
0.5
0.2
MHz
120
100
120
1000
Rev. 04 - 2 March 2009
0.5
200
1200
1000
800
500
90
90
1
1
1
500
200
800
1200
100 MHz
10
2
60
60
20
2
2
5
11
); typical values.
10
21
MBB270
30
30
MBB273
); typical values.
30
5
5
10
10
0
Product specification
BFR92A
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