BFR92AW,115 NXP Semiconductors, BFR92AW,115 Datasheet - Page 9

• Manufacturer Part Number: BFR92AW,115
• Description: TRANS NPN 15V 5GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 65
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1989-2; 934022940115; BFR92AW T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
V
V
CE
CE
= 10 V; I
= 10 V; I
C
C
= 15 mA; Z
= 15 mA.
Fig.16 Common emitter forward transmission coefficient (s
o
= 50 .
Fig.15 Common emitter input reflection coefficient (s
180
180
o
o
50
0
135
135
135
135
40
0.2
0.2
o
o
o
o
0.2
30
40 MHz
0.5
0.5
20
Rev. 03 - 12 March 2008
0.5
3 GHz
10
90
90
90
90
1
1
1
o
o
o
o
3 GHz
2
2
2
40 MHz
5
11
45
45
45
45
); typical values.
21
o
o
o
o
5
5
); typical values.
MGC895
MGC894
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR92AW
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