BFR106,215 NXP Semiconductors, BFR106,215 Datasheet - Page 2

• Manufacturer Part Number: BFR106,215
• Description: TRANS NPN 15V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR106,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3.5dB @ 800MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 9V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 9V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1987-2; 933806990215; BFR106 T/R

NXP Semiconductors
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
h
f
G
V
V
V
V
I
P
T
T
SYMBOL
C
T
C
SYMBOL
FE
stg
j
CBO
CEO
tot
o
CBO
CEO
EBO
tot
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
T
I
T
I
T
f
C
C
C
C
(pqr)
amb
amb
amb
base
emitter
collector
= 50 mA; V
= 50 mA; V
= 30 mA; V
= 50 mA; V
open emitter
open base
open collector
up to T
Code: R7p
= 25 C
= 25 C
= 25 C; d
DESCRIPTION
= 793.25 MHz
s
= 70 C; note 1
2
s
CONDITIONS
= 70 C; note 1
CE
CE
CE
CE
im
CONDITIONS
= 9 V; T
= 9 V; f = 500 MHz;
= 6 V; f = 800 MHz;
= 9 V; R
= 60 dB;
L
amb
= 75 ;
= 25 C
lfpage




25



MIN.
Top view
1





65

MIN.
Fig.1 SOT23.




80
5
11.5
350
Product specification
TYP.
20
15
3
100
500
150
175
3
MAX.
MSB003
20
15
100
500




BFR106
MAX.
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
mV
UNIT