BFR520,215 NXP Semiconductors, BFR520,215 Datasheet

TRANS NPN 70MA 15V 9GHZ SOT23

BFR520,215

Manufacturer Part Number
BFR520,215
Description
TRANS NPN 70MA 15V 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR520215.pdf (13 pages)

Specifications of BFR520,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1648-2
934018790215
BFR520 T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
Table 1:
Symbol Parameter
V
V
I
P
h
C
f
G
C
T
FE
CBO
CES
tot
re
UM
BFR520
NPN 9 GHz wideband transistor
Rev. 03 — 1 September 2004
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
RF front end wideband applications in the GHz range
Analog and digital cellular telephones
Cordless telephones (CT1, CT2, DECT, etc.)
Radar detectors
Pagers and satellite TV tuners (SATV)
Repeater amplifiers in fiber-optic systems.
collector-base voltage
collector-emitter
voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
Quick reference data
Conditions
R
up to T
I
I
f = 1 MHz
I
f = 1 GHz
I
T
C
C
C
C
amb
BE
f = 900 MHz
f = 2 GHz
= 20 mA; V
= i
= 20 mA; V
= 20 mA; V
= 0
c
= 25 C
= 0 A; V
sp
= 97 C
CE
CE
CE
CB
= 6 V
= 6 V;
= 6 V;
= 6 V;
[1]
Product data sheet
Min
-
-
-
-
60
-
-
-
-
Typ
-
-
-
-
120
0.4
9
15
9
Max
20
15
70
300
250
-
-
-
-
Unit
V
V
mA
mW
pF
GHz
dB
dB

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BFR520,215 Summary of contents

Page 1

BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain Low noise figure ...

Page 2

Philips Semiconductors Table 1: Symbol Parameter [ Pinning information Table 2: Pin Ordering information Table 3: Type number BFR520 4. Marking Table 4: Type number BFR520 [ ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CES V EBO tot T stg Thermal characteristics Table 6: ...

Page 4

Philips Semiconductors Table unless otherwise specified. j Symbol Parameter NF P L(1dB) ITO [ [ mA Measured at f 400 P tot (mW) 300 200 100 0 0 ...

Page 5

Philips Semiconductors 0 (pF) 0.4 0 MHz. C Fig 3. Feedback capacitance as a function of collector-base voltage. 25 gain (dB) 20 MSG ...

Page 6

Philips Semiconductors 50 gain (dB MSG mA Fig 7. Gain as a function of frequency min (dB) 4 ...

Page 7

Philips Semiconductors Fig 11. Noise circle figure 900 MHz. Fig 12. Noise circle figure 2000 MHz. 9397 750 13397 Product data sheet stability circle 135 0.5 pot. unst. region 0.2 0 0.2 0.5 180 0.2 F ...

Page 8

Philips Semiconductors Fig 13. Common emitter input reflection coefficient (s Fig 14. Common emitter forward transmission coefficient (s 9397 750 13397 Product data sheet 135 0.5 0.2 0 0.2 0.5 180 0.2 0.5 135 ...

Page 9

Philips Semiconductors Fig 15. Common emitter reverse transmission coefficient (s Fig 16. Common emitter output reflection coefficient (s 9397 750 13397 Product data sheet 135 180 0.5 0.4 0.3 0.2 0.1 135 mA. ...

Page 10

Philips Semiconductors 8. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 11

Philips Semiconductors 9. Revision history Table 8: Revision history Document ID Release date BFR520_3 20040901 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Table ...

Page 12

Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 13

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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