BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 4

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1998 Oct 15
V
V
V
I
h
f
C
G
|S
P
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
L1
= 25 C unless otherwise specified.
re
NPN 5 GHz wideband transistors
UM
21
|
2
UM
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
output power at 1 dB gain
compression
PARAMETER
I
I
V
I
I
T
I
I
T
I
T
I
T
I
R
C
C
E
C
C
C
C
C
C
C
CB
amb
amb
amb
amb
L
= 0.1 mA; I
= 0.1 mA; I
= 10 mA; I
= 70 mA; V
= 80 mA; V
= 0; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
= 80 mA; V
= 50 ; T
= 10 V; I
= 25 C
= 25 C
= 25 C
= 25 C
CB
4
12
CONDITIONS
= 8 V; f = 1 MHz
is zero.
amb
B
E
E
C
CE
CE
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 4 V; f = 900 MHz;
= 5 V; f = 900 MHz;
= 25 C
= 8 V
= 4 V; f = 1 GHz;
= 4 V; f = 2 GHz;
= 4 V; f = 1 GHz;
G
UM
=
10
BFG590W; BFG590W/X
log
-------------------------------------------------------------- dB.
1
–
20
15
3
60
MIN.
S
11
S
2
21
90
5
0.7
13
7.5
11
21
TYP.
1
Product specification
2
–
S
22
100
250
MAX.
2
V
V
V
nA
GHz
pF
dB
dB
dB
dBm
UNIT