BFR540,215 NXP Semiconductors, BFR540,215 Datasheet - Page 4

• Manufacturer Part Number: BFR540,215
• Description: TRANS NPN 120MA 15V 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1649-2; 934018830215; BFR540 T/R

Philips Semiconductors
9397 750 13398
Product data sheet
Fig 1. Power derating curve.
(mW)
P
tot
600
400
200
0
0
50
Table 7:
T
[1]
[2]
[3]
Symbol Parameter
NF
P
ITO
V
j
L(1dB)
O
= 25 C unless otherwise specified.
100
G
I
Measured at f
d
f
Measured at f
C
r
im
UM
G
= 805.25 MHz.
= 40 mA; V
= 60 dB (DIN 45004B); V
UM
is the maximum unilateral power gain, assuming s
noise figure
output power at
1 dB gain
compression
third order
intercept point
output voltage
Characteristics
=
150
10
CE
(2p q)
(p+q r)
T
log
sp
= 8 V; R
mea398
( C)
= 898 MHz and f
= 793.25 MHz.
----------------------------------------------------- dB.
Rev. 05 — 1 September 2004
1
200
–
L
= 50 ; T
s
…continued
Conditions
T
I
R
f = 900 MHz
I
Z
T
11
C
C
s
amb
L
amb
L
p
I
I
I
= 40 mA; V
= 40 mA; V
=
s
2
C
C
C
= Z
= 50 ; T
= V
21
= 10 mA; f = 900 MHz
= 40 mA; f = 900 MHz
= 10 mA; f = 2 GHz
= 25 C
= 25 C
1
opt
S
O
2
amb
(2q p)
; V
–
= 75 ;
; V
Fig 2. DC current gain as a function of collector
q
s
= 25 C; f = 900 MHz; f
CE
22
= V
= 904 MHz.
amb
h
CE
CE
2
FE
= 8 V;
O
250
200
150
100
50
= 25 C;
= 8 V;
= 8 V;
0
10
V
current.
6 dB; f
CE
2
= 8 V.
p
12
= 795.25 MHz; V
is zero and
10
1
[2]
[3]
p
NPN 9 GHz wideband transistor
= 900 MHz; f
Min
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
1
R
= V
q
Typ
1.3
1.9
2.1
21
34
550
O
= 902 MHz.
10
6 dB; f
I
BFR540
C
(mA)
mra687
q
Max
1.8
2.4
-
-
-
-
= 803.25 MHz;
10
2
4 of 13
Unit
dB
dB
dB
dBm
dBm
mV