HFA3096BZ Intersil, HFA3096BZ Datasheet - Page 5

• Manufacturer Part Number: HFA3096BZ
• Description: IC TRANSISTOR ARRAY UHF 16-SOIC
• Manufacturer: Intersil

Specifications of HFA3096BZ

• Transistor Type: 3 NPN + 2 PNP
• Voltage - Collector Emitter Breakdown (max): 12V, 15V
• Frequency - Transition: 8GHz, 5.5GHz
• Noise Figure (db Typ @ F): 3.5dB @ 1GHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Current, Collector: 500 mA
• Number Of Transistors: 5
• Package Type: SOIC
• Polarization: NPN
• Temperature, Operating, Maximum: +125 °C
• Temperature, Operating, Minimum: -55 °C
• Voltage, Input: 20 V
• Voltage, Output: 50 V
• Voltage, Saturation, Collector To Emitter: 0.5
• Module Configuration: Five
• Transistor Polarity: NPN & PNP
• Collector Emitter Voltage V(br)ceo: 8V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 37mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Electrical Specifications
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
Input Offset Current
Input Offset Voltage TC
V
FREQ. (Hz)
CE
1.0E+08
2.0E+08
3.0E+08
4.0E+08
5.0E+08
6.0E+08
7.0E+08
8.0E+08
9.0E+08
1.0E+09
1.1E+09
1.2E+09
1.3E+09
1.4E+09
1.5E+09
1.6E+09
1.7E+09
1.8E+09
1.9E+09
2.0E+09
2.1E+09
2.2E+09
2.3E+09
2.4E+09
2.5E+09
2.6E+09
2.7E+09
2.8E+09
2.9E+09
3.0E+09
= 5V and I
PARAMETER
C
= 5mA
|S
0.83
0.79
0.73
0.67
0.61
0.55
0.50
0.46
0.42
0.39
0.36
0.34
0.32
0.30
0.28
0.27
0.25
0.24
0.23
0.22
0.21
0.20
0.20
0.19
0.18
0.18
0.17
0.17
0.16
0.16
11
|
5
PHASE(S
T
-100.12
-101.15
-102.15
A
-103.11
-22.82
-32.64
-41.08
-48.23
-54.27
-59.41
-67.63
-70.98
-73.95
-76.62
-79.04
-81.25
-83.28
-85.17
-86.92
-88.57
-90.12
-91.59
-92.98
-94.30
-95.57
-96.78
-97.93
-99.05
-63.81
-11.78
I
I
I
= 25°C (Continued)
C
C
C
= 10mA, V
= 10mA, V
= 10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
11
)
TEST CONDITIONS
CE
CE
CE
10.51
11.07
|S
9.75
8.91
8.10
7.35
6.69
6.11
5.61
5.17
4.79
4.45
4.15
3.89
3.66
3.45
3.27
3.10
2.94
2.80
2.68
2.56
2.45
2.35
2.26
2.18
2.10
2.02
1.96
1.89
= 5V
= 5V
= 5V
21
|
PHASE(S
168.57
157.89
148.44
140.36
133.56
127.88
123.10
109.91
107.57
105.47
103.57
101.84
100.26
119.04
115.57
112.55
98.79
97.43
96.15
94.95
93.81
92.73
91.70
90.72
89.78
88.87
88.00
87.15
86.33
85.54
21
)
MIN
-
-
-
1.41E-02
2.69E-02
3.75E-02
4.57E-02
5.19E-02
5.65E-02
6.00E-02
6.27E-02
6.47E-02
6.63E-02
6.75E-02
6.85E-02
6.93E-02
7.00E-02
7.05E-02
7.10E-02
7.13E-02
7.17E-02
7.19E-02
7.21E-02
7.23E-02
7.25E-02
7.27E-02
7.28E-02
7.29E-02
7.30E-02
7.31E-02
7.31E-02
7.32E-02
7.32E-02
|S
12
TYP
DIE
1.5
0.5
|
5
PHASE(S
MAX
5.0
25
-
78.88
68.63
59.58
51.90
45.50
40.21
35.82
32.15
29.07
26.45
24.19
20.53
19.02
17.69
16.49
15.41
14.43
13.54
12.73
10.64
10.05
11.98
11.29
22.24
9.49
8.96
8.47
8.01
7.57
7.16
12
MIN
)
-
-
-
SOIC, QFN
|S
TYP
0.97
0.93
0.86
0.79
0.73
0.67
0.62
0.57
0.53
0.50
0.47
0.45
0.43
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.35
0.34
0.34
0.33
0.33
0.33
0.33
0.33
0.33
0.33
1.5
0.5
5
22
|
MAX
5.0
25
December 21, 2005
-
PHASE(S
-11.05
-21.35
-30.44
-38.16
-44.59
-49.93
-54.37
-58.10
-61.25
-63.96
-66.31
-68.37
-70.19
-71.83
-73.31
-74.66
-75.90
-77.05
-78.12
-79.13
-80.09
-80.99
-81.85
-82.68
-83.47
-84.23
-84.97
-85.68
-86.37
-87.05
FN3076.13
UNITS
µV/°C
mV
µA
22
)