BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet
BFR505T,115
Specifications of BFR505T,115
BFR505T T/R
BFR505T T/R
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BFR505T,115 Summary of contents
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DATA SHEET BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 2000 Mar 14 DISCRETE SEMICONDUCTORS M3D173 2000 May 17 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable ...
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... NXP Semiconductors NPN 9 GHz wideband transistor THERMAL RESISTANCE SYMBOL R thermal resistance from junction to soldering point th j-s 200 P tot (mW) 150 100 100 Fig.2 Power derating curve. 2000 May 17 PARAMETER MGU068 150 200 T s (°C) 3 Product specification BFR505T VALUE UNIT 500 K/W ...
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... NXP Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS = 25 C; unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance re f transition frequency T G maximum unilateral power gain; UM note 1 S 2 insertion power gain ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 200 handbook, halfpage h FE 150 100 50 0 −3 −2 − Fig.3 DC current gain as a function of collector current. 12 handbook, halfpage f T (GHz − GHz; T amb Fig.5 Transition frequency as a function of collector current. 2000 May 17 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G gain. 25 handbook, halfpage gain (dB MSG 900 MHz amb Fig.6 Gain as a function of collector current. 50 handbook, halfpage gain (dB MSG 10 0 −2 − 1.25 mA amb Fig.8 Gain as a function of frequency. ...
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... NXP Semiconductors NPN 9 GHz wideband transistor 4 handbook, halfpage F (dB GHz 900 MHz 500 MHz 1 0 − amb Fig.10 Minimum noise figure as a function of collector current. handbook, full pagewidth stability circle 180° 1.25 mA 900 MHz 2000 May 17 MRC018 handbook, halfpage ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° 1.25 mA GHz handbook, full pagewidth 180° mA Fig.14 Common emitter input reflection coefficient (S 2000 May 17 90° 135° min = 1.9 dB 0.2 0.2 0 0.2 0.5 −135° ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.15 Common emitter forward transmission coefficient (S handbook, full pagewidth 180° mA Fig.16 Common emitter reverse transmission coefficient (S 2000 May 17 90° 135° 40 MHz 3 GHz −135° −90° 90° ...
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... NXP Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180° mA Fig.17 Common emitter output reflection coefficient (S 2000 May 17 90° 1 135° 0.5 0.2 0.2 0 GHz 0.2 0.5 −135° 1 −90° 10 Product specification 1.0 0.8 45° 2 0.6 0 ...
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... NXP Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION IEC SOT416 2000 May 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 0.7 1.45 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...