BFG93A,215 NXP Semiconductors, BFG93A,215 Datasheet - Page 5

• Manufacturer Part Number: BFG93A,215
• Description: TRANS NPN 12V 35MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG93A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933821140215; BFG93A T/R; BFG93A T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistors
V
Fig.6
V
Fig.8
gain
(dB)
gain
(dB)
CE
CE
= 8 V; f = 500 MHz.
= 8 V; I
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
C
= 10 mA.
MSG
10
G UM
10
2
20
10
3
30
f
(MHz)
G max
I
G UM
C
MSG
(mA)
MCD090
MCD092
10
Rev. 05 - 26 November 2007
40
4
handbook, halfpage
handbook, halfpage
V
Fig.7
V
Fig.9
gain
(dB)
gain
(dB)
CE
CE
= 8 V; f = 1 GHz.
= 8 V; I
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
C
= 30 mA.
MSG
10
10
G UM
2
BFG93A; BFG93A/X
20
10
3
Product specification
G max
30
f (MHz)
I
G UM
MSG
C
(mA)
MCD091
MCD093
5 of 13
10
40
4