AT-31011-TR2G Avago Technologies US Inc., AT-31011-TR2G Datasheet - Page 2

• Manufacturer Part Number: AT-31011-TR2G
• Description: TRANS NPN BIPO 5.5V 16MA SOT-143
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-31011-TR2G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz
• Gain: 11dB ~ 13dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 1mA, 2.7V
• Current - Collector (ic) (max): 16mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

AT-31011, AT-31033 Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
3. Derate at 1.82 mW/°C for T
Electrical Specifications, T
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
W = 10 L = 1000
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Symbol
Symbol
Input loss = 0.4 dB; output loss = 0.4 dB.
Input loss = 0.4 dB; output loss = 0.4 dB.
1000 pF
Mounting Surface
V
V
V
T
I
I
h
NF
G
P
CBO
EBO
CBO
CEO
EBO
I
T
STG
FE
C
T
A
j
V
BB
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Noise Figure
V
Associated Gain
V
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
CE
CE
= 25°C.
W = 10 L = 1860
= 2.7 V, I
= 2.7 V, I
Parameters and Test Conditions
Parameter
W = 30 L = 100
C
C
C
> 67.5°C.
= 1 mA
= 1 mA
[2,3]
A
= 25
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
W = 30 L = 100
Units Absolute Maximum
mW
mA
°C
°C
V
V
V
°
C
NOT TO SCALE
f = 0.9 GHz
f = 0.9 GHz
V
W = 10 L = 1860
CE
I
V
V
C
CB
EB
= 1 mA
= 2.7 V
= 3 V
= 1 V
-65 to 150
150
150
1.5
5.5
V
11
16
CC
Units
µA
µA
dB
dB
-
W = 10 L = 1025
25 Ω
1000 pF
Min
11
70
[1]
[1]
AT-31011
0.9
Typ
13
0.05
0.1
[1]
[1]
2
Thermal Resistance
Max
1.2
300
0.2
1.5
[1]
θ
jc
= 550°C/W
Min
9
70
[2]
AT-31033
Typ
0.9
11
0.05
0.1
[2]
[2]
[2]
:
Max
1.2
300
0.2
1.5
[2]