NE687M13-T3-A CEL, NE687M13-T3-A Datasheet

NE687M13-T3-A

Manufacturer Part Number

NE687M13-T3-A

Description

TRANSISTOR NPN 2GHZ M13

Manufacturer

CEL

Datasheet

1.NE687M13-T3-A.pdf (8 pages)

Specifications of NE687M13-T3-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

14GHz

Noise Figure (db Typ @ F)

1.4dB ~ 2dB @ 2GHz

Power - Max

90mW

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 20mA, 2V

Current - Collector (ic) (max)

30mA

Mounting Type

Surface Mount

Package / Case

Surface Mount

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.03 A

Power Dissipation

90 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

NEC's NE687M13 transistor is designed for low noise, high

gain, and low cost requirements. This high f

for very low voltage/low current designs for portable wireless

communications and cellular radio applications. NEC's new

low profile/flat lead style "M13" package is ideal for today's

portable wireless applications.

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.

• NEW MINIATURE M13 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

SYMBOLS

– Small transistor outline

– 1.0 X 0.5 X 0.5 mm

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

NF = 1.4 dB at 2 GHz

= 14 GHz

CBO

EBO

21E

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

NEC's NPN SILICON TRANSISTOR

PARAMETERS AND CONDITIONS

= 1 V, I

= 2 V, I

EIAJ

= 1 V, I

= 2 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

part is well suited

PART NUMBER

= 2 V, I

= 1 V, I

= 3 mA, f = 2 GHz, Z

= 2 V, I

= 1 V, I

= 2 V, I

= 5 V, I

= 10 mA, f = 2 GHz

= 20 mA, f = 2 GHz

= 10 mA, f = 2 GHz

= 25°C)

= 20 mA,

= 0

= 0, f = 1 MHz,

= 0

Note 2

= Z

opt

Note 3

OUTLINE DIMENSIONS

California Eastern Laboratories

UNITS

GHz

µA

0.7±0.05

0.1

PACKAGE OUTLINE M13

0.5

+0.1

ñ0.05

MIN

9.0

7.0

8.5

6.0

0.1

NE687M13

(Units in mm)

PIN CONNECTIONS

NE687M13

2SC5618

M13

TYP

14.0

12.0

10.0

1.4

1.5

9.0

0.4

(Bottom View)

0.2

1. Emitter

2. Base

3. Collector

0.3

MAX

0.2

130

2.0

0.1

0.8

Related parts for NE687M13-T3-A

NE687M13-T3-A Summary of contents

Page 1

... T • LOW NOISE FIGURE 1 GHz DESCRIPTION NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high f for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications ...

Page 2

... Base to Emmiter Voltage ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 5.0 NE687M13-A V 3.0 NE687M13-T3 150 °C -65 to +150 ° 25°C) A 125 150 (°C) A 0.9 1.0 (V) BE QUANTITY REVERSE TRANSFR CAPACITANCE vs. ...

Page 3

TYPICAL PERFORMANCE CURVES DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 10 0 Collector Current INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 5 0 ...

Page 4

... NE687M13 TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 1.5 GHz Collector Current NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current 25° 100 (mA 100 (mA 100 (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ...

Page 5

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 10 50 100 25 0 S22 -j10 -j25 -j50 NE687M13 Frequency S 11 GHz MAG ANG 0.100 0.71 -28.83 0.200 0.64 -56.70 0.300 0.57 -77.87 0.400 0.53 -94.58 0.500 0.49 -107.39 0.600 0.45 -120.85 0.700 0.44 -129.42 ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 10 50 100 25 0 S22 -j10 -j25 -j50 NE687M13 Frequency S 11 GHz MAG ANG 0.100 0.86 -14.28 0.200 0.81 -31.85 0.300 0.76 -46.05 0.400 0.70 -59.23 0.500 0.65 -70.68 0.600 0.58 -82.92 0.700 0.54 -91.97 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 10 50 100 25 0 S22 -j10 -j25 -j50 NE687M13 Frequency S 11 GHz MAG ANG 0.100 0.57 -36.15 0.200 0.50 -67.88 0.300 0.45 -90.13 0.400 0.42 -106.56 0.500 0.40 -118.50 0.600 0.37 -131.65 0.700 0.37 -139.21 ...

Page 8

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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