NESG2031M05-A CEL, NESG2031M05-A Datasheet - Page 4

• Manufacturer Part Number: NESG2031M05-A
• Description: TRANS NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NESG2031M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 17dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
35
30
25
20
15
10
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
5
0
0.1
0.1
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
V
f = 2 GHz
CE
= 2 V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current, l
MSG
|
S21e
MSG
vs. FREQUENCY
vs. FREQUENCY
|S
Frequency, f (GHz)
Frequency, f (GHz)
1
1
21e
|
2
|
2
10
MAG
MAG
10
10
C
(mA)
V
I
V
I
C
C
CE
CE
= 20 mA
= 20 mA
= 3 V
(T
= 1 V
A
= 25ºC)
100
100
100
35
30
25
20
15
10
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
5
0
0.1
1
1
V
f = 2 GHz
V
f = 1 GHz
INSERTION POWER GAIN, MAG, MSG
CE
CE
INSERTION POWER GAIN, MAG,
= 3 V
= 1 V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, l
Collector Current, I
MSG vs. FREQUENCY
MSG
|
S21e
Frequency, f (GHz)
1
|
2
10
10
MSG
|S
MAG
21e
|
2
10
C
C
(mA)
(mA)
NESG2031M05
MAG
V
I
C
CE
= 20 mA
= 2 V
100
100
100