AT-42086-BLKG Avago Technologies US Inc., AT-42086-BLKG Datasheet - Page 2

• Manufacturer Part Number: AT-42086-BLKG
• Description: TRANS NPN BIPO 12V 80MA 86-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42086-BLKG

• Package / Case: 86-SMD
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
• Gain: 9dB ~ 13dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30 at 35 mA at 8 V
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 80 mA
• Maximum Dc Collector Current: 0.08 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 8000 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1860; AT-42086-BLKG

Electrical Specifi cations, T
AT-42086 Absolute Maximum Ratings
Note:
1. For this test, the emitter is grounded.
2
Symbol
|S
P
G
NF
G
f
h
I
I
C
CBO
EBO
T
1 dB
FE
CB
1 dB
A
Symbol
21E
V
O
V
V
T
CBO
CEO
P
EBO
STG
I
T
|
C
T
2
j
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
O
C
; V
= 35 mA
CE
Parameter
A
= 8 V, I
= 25°C
C
CE
[2,3]
= 10 mA
EB
Parameters and Test Conditions
CE
CE
= 8 V, I
CB
CE
= 1 V
[1]
= 8 V, I
= 8 V, I
= 8 V
: V
= 8 V, I
CB
C
CE
= 35 mA
C
C
= 8 V, f = 1 MHz
= 35 mA
= 8 V, I
= 10 mA
C
= 35 mA
C
Units
mW
mA
= 35 mA
°C
°C
V
V
V
Maximum
-65 to 150
Absolute
500
150
1.5
20
12
80
[1]
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Notes:
1. Permanent damage may occur if any
2. T
3. Derate at 7.1 mW/°C for T
of these limits are exceeded.
CASE
Units
dBm
= 25°C.
GHz
µA
µA
dB
dB
dB
dB
—
pF
Thermal Resistance
θ
jc
= 140°C/W
15.0
Min.
30
Typ.
16.5
10.5
20.5
20.0
13.5
13.0
0.32
150
4.5
9.0
1.9
3.5
9.0
8.0
C
[2]
> 80°C.
:
Max.
270
0.2
2.0