BFQ 19S E6327 Infineon Technologies, BFQ 19S E6327 Datasheet
BFQ 19S E6327
Specifications of BFQ 19S E6327
SP000011042
Related parts for BFQ 19S E6327
BFQ 19S E6327 Summary of contents
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NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P 1200 mW 1000 900 800 700 600 500 400 300 200 100 Permissible Pulse Load = ƒ totmax totDC ...
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Package Outline 1) Ejector pin markings possible Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Package SOT89 4.5 ±0.1 B 1.5 45˚ 0.25 ±0.05 0. 1.5 ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...