BFP 650 E6327 Infineon Technologies, BFP 650 E6327 Datasheet - Page 18

• Manufacturer Part Number: BFP 650 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 650 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 37GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
• Gain: 10.5dB ~ 21.5dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 80mA, 3V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110 @ 80mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 37000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 650 E6327; BFP650E6327INTR; BFP650E6327XT; SP000013932

4.5
Figure 8
Figure 9
Data Sheet
Characteristic AC Diagrams
Transition Frequency
3rd Order Intercept Point
45
40
35
30
25
20
15
10
32
30
28
26
24
22
20
18
5
0
0
0
20
20
f
T
=
40
40
OIP
f
(
I
C
3
),
=
60
f
60
3V, 2.4GHz
4V, 2.4GHz
3V, 3.5GHz
4V, 3.5GHz
f
= 1 GHz,
(
I
C
),
80
80
Z
18
I
I
C
C
S
=
[mA]
[mA]
V
Z
CE
100
100
L
= 50
= Parameter
120
120
,
V
4.00V
CE
,
140
140
f
= Parameters
3.00V
2.50V
2.00V
1.00V
160
160
Electrical Characteristics
Revision 1.0, 2010-10-22
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180
BFP650