BFS 360L6 E6327 Infineon Technologies, BFS 360L6 E6327 Datasheet
BFS 360L6 E6327
Manufacturer Part Number
BFS 360L6 E6327
Description
TRANSISTOR NPN 6V 35MA TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_360L6_E6327.pdf
(3 pages)
Specifications of BFS 360L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
Gain
10dB ~ 14.5dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS360L6E6327XT
SP000013974
SP000013974
NPN Silicon RF Transistor
Preliminary data
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BFS360L6
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
Built in 2 transitors ( TR1, TR2: die as BFR360L3)
S
Low voltage/ Low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
S is measured on the collector lead at the soldering point to the pcb
101°C
thJA
Marking
FB
please refer to Application Note Thermal Resistance
1)
2)
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
6
5
4
P-TSLP-6-1
-65 ... 150
-65 ... 150
Value
Value
210
150
15
15
35
230
6
2
4
Package
BFS360L6
Jun-11-2003
1
2
Unit
V
mA
mW
°C
Unit
K/W
3
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BFS 360L6 E6327 Summary of contents
Page 1
NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1 1.8 GHz Built in ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz, emitter grounded CB ...