P0118DA 1AA3 STMicroelectronics, P0118DA 1AA3 Datasheet - Page 4

• Manufacturer Part Number: P0118DA 1AA3
• Description: SCR 0.8A 400V 5UA TO-92-3
• Manufacturer: STMicroelectronics

Specifications of P0118DA 1AA3

• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.95V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 5µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 7A, 8A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 8 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 100 uA
• Forward Voltage Drop: 1.93 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 8 V
• Gate Trigger Current (igt): 0.005 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7417; P0118DA 1AA3

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
6
5
4
3
2
1
0
10.0
8
7
6
5
4
3
2
1
0
-40
1.0
0.1
1
I
I
GT H L
TSM
,I ,I [T ] /
0
dV/dt[R
R
(A)
GK
I
-20
H
& I
= 1k
0.2
L
j
GK
T
Repetitive
Relative variation of gate trigger,
holding and latching current versus
junction temperature
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values).
Surge peak on-state current versus
number of cycles
amb
I
I
0
0.4
GT H L
] / dV/dt[
GT
=25°C
T (°C)
,I ,I [T =25°C]
j
0.6
10
20
R
j
Non repetitive
T initial=25°C
Number of cycles
GK
j
0.8
40
=1k ]
R
GK
1.0
(k )
60
1.2
100
80
typical values
1.4
100
1.6
V = 0.67 x V
t =10ms
p
D
One cycle
T
j
= 125°C
120
1.8
DRM
1000
140
2.0
Figure 6.
Figure 8.
Figure 10. Non-repetitive surge peak on-state
10
20
18
16
14
12
10
100.0
8
6
4
2
0
8
6
4
0
2
10.0
1E-2
1.0
0.1
0
dV/dt[C
I [R
H
0.01
V = 0.67 x V
D
I
TSM
GK
R
T
j
GK
= 125°C
sinusoidal pulse with
width t < 10ms
= 1k
] / I [
GK
(A), I t (A s)
1
DRM
Relative variation of holding
current versus gate-cathode
resistance (typical values)
H
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
current and corresponding value
of I²t
] / dV/dt[
R
p
2
GK
=1k ]
2
2
1E-1
R
0.10
GK
=1k ]
R
3
C
t (ms)
GK
GK
p
(k )
(nF)
4
1E+0
1.00
5
I
TSM
T initial = 25°C
j
I t
2
6
T
j
= 25°C
P011xx
10.00
1E+1
7