ZXTD6717E6TA Diodes Zetex, ZXTD6717E6TA Datasheet - Page 3

TRANS NPN/PNP DL 15/-12V SOT23-6

ZXTD6717E6TA

Manufacturer Part Number
ZXTD6717E6TA
Description
TRANS NPN/PNP DL 15/-12V SOT23-6
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTD6717E6TA

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
1.5A, 1.25A
Voltage - Collector Emitter Breakdown (max)
15V, 12V
Vce Saturation (max) @ Ib, Ic
245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
Current - Collector Cutoff (max)
10nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 500mA, 2V / 200 @ 500mA, 2V
Power - Max
1.1W
Frequency - Transition
180MHz, 220MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXTD6717E6TATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTD6717E6TA
Manufacturer:
ZETEX
Quantity:
3 000
Part Number:
ZXTD6717E6TA
Manufacturer:
DIODES/美台
Quantity:
20 000
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - JULY 2001
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
15
15
5
200
300
250
200
75
30
3
TYP.
150
205
0.865
420
450
390
300
150
180
15
250
16.5
40
75
0.93
75
50
2%
MAX.
10
10
10
100
200
245
1.1
1.1
20
55
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXTD6717E6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
=100 A
=10mA*
=100 A
=100mA, I
=250mA, I
=500mA, I
=1A, I
=1.5A, I
=1.5A, I
=1.5A, V
=10mA, V
=100mA, V
=500mA, V
=1A, V
=3A, V
=5A, V
=50mA, V
=1A, V
=I
=4V
=10V
=10V, f=1MHz
B2
=10V
=100mA
B
CE
CE
CE
CC
=10mA*
B
B
CE
=2V*
=2V*
=2V*
=20mA*
=20mA*
=10V
CE
CE
B
B
B
=2V*
CE
CE
=10mA*
=10mA*
=10mA*
=2V*
=10V
=2V*
=2V*

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