IMT17T110 Rohm Semiconductor, IMT17T110 Datasheet - Page 2

• Manufacturer Part Number: IMT17T110
• Description: TRANS DUAL PNP 50V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMT17T110

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 200MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: -500mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 200 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMT17T110; IMT17T110TR

Transistors
Fig.1 Grounded emitter propagation
Electrical characteristic curves
−0.05
−0.03
−0.02
−0.01
−500
−200
−100
1000
Fig.7 Collector-emitter saturation
−0.5
−0.2
−0.1
−1.0
−0.5
−0.3
−0.2
−0.1
−50
−20
−10
500
200
100
Fig.4 DC current gain vs. collector
−5
−2
−1
50
20
−1 −2
0
Ta=100
Ta=100
−0.2
BASE TO EMITTER VOLTAGE : V
−1 −2
characteristics
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
− 55
−55
voltage vs. collector current (ΙΙ)
−0.4−0.6−0.8−1.0−1.2−1.4−1.6−1.8−2.0−2.2
25
current ( Ι )
25
°C
°C
°C
°C
°C
°C
−5 −10 −20
−5 −10 −20 −50 −100−200 −500−1000
V
−50 −100 −200 −500−1000
CE
= −5V
−3V
−1V
C
C
Ta=25
(mA)
V
(mA)
l
C
CE
/l
B
= − 3V
BE
=10
°C
(V)
−100
−80
−60
−40
−20
Fig.2 Grounded emitter output
1000
1000
COLLECTOR TO EMITTER VOLTAGE : V
500
200
100
0
500
200
100
50
Fig.8 Gain bandwidth product vs.
50
20
Fig.5 DC current gain vs. collector
0.5
0
Ta = 25
−1mA
−1 −2
characteristics ( Ι )
COLLECTOR CURRENT : I
°C
−1
current (ΙΙ)
1
emitter current
EMITTER CURRENT : I
−5 −10 −20
Ta=100
2
−2
−55
25
°C
°C
°C
5
−0.9mA
−3
−0.8mA
−50−100−200 −500 −1000
−0.7mA
10
−0.6mA
E
−0.5mA
−4
−0.4mA
(mA)
V
−0.3mA
Ta = 25
C
−0.2mA
−0.1mA
20
V
CE
I
(mA)
B
CE
=0 A
= −5V
= −3V
°C
CE
−5
(V)
50
− 500
− 400
− 300
− 200
− 100
Fig.9 Collector output capacitance
100
−0.05
−0.02
Fig.6 Collector-emitter saturation
0
50
20
10
COLLECTOR TO EMITTER VOLTAGE : V
−0.5
−0.2
−0.1
−0.5
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
0
Fig.3 Grounded emitter output
−1
−1 −2
voltage vs. collector current ( Ι )
vs. collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
I
−1
C
COLLECTOR CURRENT : I
/I
characteristics (ΙΙ)
B
= 50
−5 −10 −20
20
10
−2
Rev.A
−5
−5
−50 −100 −200 −500
−10
−2.0mA
−1.5mA
−5.0mA
−4.5mA
IMT17
−1.0mA
Ta=25
−4.0mA
−20
Ta = 25
I
I
f = 1MHz
E
C
−3.5mA
−3.0mA
−0.5mA
C
−2.5mA
I
Ta=25
= 0A
= 0A
: V
B
(mA)
= 0 A
CB
EB
°C
°C
CE
(V)
(V)
−10
°C
2/2
−50
(V)