BC847BPN,125 NXP Semiconductors, BC847BPN,125 Datasheet - Page 8

TRANS NPN/PNP 45V 100MA SC-88

BC847BPN,125

Manufacturer Part Number
BC847BPN,125
Description
TRANS NPN/PNP 45V 100MA SC-88
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BC847BPN,125

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200
Gain Bandwidth Product Ft
100 MHz
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
400 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934042530125

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BPN,125
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BC847BPN_4
Product data sheet
Fig 10. TR2 (PNP): DC current gain as a function of
Fig 12. TR2 (PNP): Base-emitter voltage as a function
h
1200
1000
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
mV
FE
600
400
200
800
600
400
200
BE
0
10
10
V
collector current; typical values
V
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
2
= 5 V
= 5 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
10
1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
2
10
I
006aab425
C
2
I
C
(mA)
mld700
(mA)
Rev. 04 — 18 February 2009
10
10
3
3
Fig 11. TR2 (PNP): Collector current as a function of
Fig 13. TR2 (PNP): Base-emitter saturation voltage as
45 V, 100 mA NPN/PNP general-purpose transistor
V
(mV)
(A)
BEsat
1200
1000
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
800
600
400
200
0
10
0
T
collector-emitter voltage; typical values
I
a function of collector current; typical values
C
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 150 C
1
1
2
I
B
10
(mA) = 3.5
(1)
(2)
(3)
3
BC847BPN
2.8
2.1
1.4
0.7
10
© NXP B.V. 2009. All rights reserved.
2
4
I
006aab426
C
V
3.15
2.45
1.75
1.05
0.35
CE
(mA)
mld702
(V)
10
5
3
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