BC857CDW1T1G ON Semiconductor, BC857CDW1T1G Datasheet

TRANS PNP DUAL 45V 100MA SOT-363

BC857CDW1T1G

Manufacturer Part Number
BC857CDW1T1G
Description
TRANS PNP DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC857CDW1T1G

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC857CDW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC857CDW1T1G
Manufacturer:
INF
Quantity:
5 694
Part Number:
BC857CDW1T1G
Manufacturer:
LRC/乐山
Quantity:
20 000
BC856BDW1T1G,
BC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −Continuous
Total Device Dissipation Per Device
Thermal Resistance,
Junction and Storage Temperature
Range
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FR−5 Board (Note 1)
T
Derate Above 25°C
Junction−to−Ambient
A
Characteristic
= 25°C
Rating
Preferred Devices
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Symbol
T
V
V
V
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−100
−5.0
Max
−65
−45
−30
−80
−50
−30
380
250
328
3.0
1
mW/°C
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
3x
M
G
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(3)
(4)
1
= Specific Device Code
= Date Code
= Pb−Free Package
x = B, F, G, or L
(See Ordering Information)
MARKING DIAGRAM
http://onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
3x M G
(5)
Publication Order Number:
G
(2)
1
BC856BDW1T1/D
(1)
(6)
Q
2

Related parts for BC857CDW1T1G

BC857CDW1T1G Summary of contents

Page 1

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage (I = −10 mA Collector −Base Breakdown Voltage (I = −10 mA) C Emitter −Base Breakdown Voltage ...

Page 3

TYPICAL CHARACTERISTICS − BC856 25°C A 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain -2.0 -1.6 I ...

Page 4

TYPICAL CHARACTERISTICS − BC857/BC858 2 - 25°C A 1.0 0.7 0.5 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 - COLLECTOR CURRENT (mAdc) C Figure 7. Normalized DC Current Gain -2.0 ...

Page 5

... COLLECTOR-EMITTER VOLTAGE (V) CE Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device BC856BDW1T1G BC856BDW1T3G BC857BDW1T1G BC857CDW1T1G BC858CDW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk) DUTY CYCLE 100 1 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords