MBT3906DW1T1 ON Semiconductor, MBT3906DW1T1 Datasheet

TRANS DUAL GP 200MA 40V SOT363

MBT3906DW1T1

Manufacturer Part Number
MBT3906DW1T1
Description
TRANS DUAL GP 200MA 40V SOT363
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBT3906DW1T1

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MBT3906DW1T1OSCT

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SUBJECT: ON Semiconductor Product Bulletin #16023
TITLE: Datasheet update to MBT2222ADW1T1, MBT3904DW1T1, MBT3906DW1T1,
MBT3946DW1T1
PROPOSED FIRST SHIP DATE: 15 Jun 2007
AFFECTED PRODUCT DIVISION: Discrete Products Division
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor sales office or Emmanuelle Todd <emmanuelle.todd@onsemi.com>
NOTIFICATION TYPE:
ON Semiconductor considers this change approved unless specific conditions of acceptance are provided in
writing. To do so, contact your local ON Semiconductor sales office.
DESCRIPTION AND PURPOSE:
ESD ratings will be adjusted on our datasheets to reflect new standardized format:
AFFECTED DEVICE LIST
MBT2222ADW1T1
MBT2222ADW1T1G
MBT3904DW1T1
MBT3904DW1T1G
MBT3904DW1T3
MBT3904DW1T3G
MBT3906DW1T1
MBT3906DW1T1G
MBT3946DW1T1
MBT3946DW1T1G
MBT3946DW1T2G
Issue Date: 15 Jun 2007
- Human Body Model Class 2
- Machine Model Class B.
PRODUCT BULLETIN
Rev.07-02-06
Generic Copy
15 Jun 2007
Page 1 of 1

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