UMG8NTR Rohm Semiconductor, UMG8NTR Datasheet
UMG8NTR
Manufacturer Part Number
UMG8NTR
Description
TRANS DUAL NPN 50V 100MA SOT-353
Manufacturer
Rohm Semiconductor
Specifications of UMG8NTR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
80
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMG8NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Emitter common
(dual digital transistors)
EMG8 / UMG8N / FMG8A
1) Two DTC143Z chips in a EMT or UMT or SMT
2) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both the DTr
DTr
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
package.
EMG8 / UMG8N
2
DTr
.
R
2
1
(4)
(3)
Parameter
R
2
EMG8, UMG8N
FMG8A
(2)
R
2
(5)
(1)
R
DTr
1
1
R
R
1
2
=4.7kΩ
=47kΩ
Symbol
I
C (Max.)
Tstg
V
DTr
V
Pd
I
Tj
FMG8A
CC
O
IN
R
2
1
(2)
(3)
R
2
150 (TOTAL)
300 (TOTAL)
−55 to +150
(4)
Limits
R
100
100
150
50
30
−5
2
(1)
R
DTr
(5)
1
1
R
R
1
2
=4.7kΩ
=47kΩ
1
Unit
mW
mA
˚C
˚C
V
V
and
∗
∗
1
2
External dimensions (Unit : mm)
EMG8
ROHM : EMT5
UMG8N
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
FMG8A
0.3to0.6
Abbreviated symbol : G8
Abbreviated symbol : G8
Abbreviated symbol : G8
EMG8 / UMG8N / FMG8A
0.1Min.
(4)
(5)
1.25
1.6
2.8
1.2
1.6
2.1
Each lead has same dimensions
(3)
(2)
(1)
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/2
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UMG8NTR Summary of contents
Page 1
Transistors Emitter common (dual digital transistors) EMG8 / UMG8N / FMG8A Features 1) Two DTC143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol V I (off) Input voltage V I (on) Output voltage V O (on) Input current I I Output current I O (off) DC current gain G I Transition frequency f T Input ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...