M25PE16-VMW6G NUMONYX, M25PE16-VMW6G Datasheet - Page 17

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M25PE16-VMW6G

Manufacturer Part Number
M25PE16-VMW6G
Description
Flash Mem Serial-SPI 3.3V 16M-Bit 2M x 8 8ns 8-Pin SOIC W Tube
Manufacturer
NUMONYX
Datasheet

Specifications of M25PE16-VMW6G

Package
8SOIC W
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 32
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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Part Number:
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Memory organization
The memory is organized as:
Each page can be individually:
The device is page, sector or bulk erasable (bits are erased from 0 to 1).
Table 4.
Sector Subsector
31
30
29
28
27
26
25
24
8192 pages (256 bytes each).
2,097,152 bytes (8 bits each)
32 sectors (512 Kbits, 65536 bytes each)
512 subsectors (32 Kbits, 4096 bytes each)
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1)
511
496
495
480
479
464
463
448
447
432
431
416
415
400
399
384
Memory organization
1EF000h
1DF000h
1D0000h
1CF000h
1C0000h
1BF000h
1AF000h
1FF000h
1F0000h
1E0000h
1B0000h
1A0000h
19F000h
18F000h
190000h
180000h
Address range
1DFFFFh
1D0FFFh
1CFFFFh
1C0FFFh
1FFFFFh
1F0FFFh
1EFFFFh
1E0FFFh
1BFFFFh
1B0FFFh
1AFFFFh
1A0FFFh
19FFFFh
18FFFFh
190FFFh
180FFFh
Sector Subsector
23
22
21
20
19
18
17
16
383
368
367
352
351
336
335
320
319
304
303
288
287
271
272
256
Memory organization
17F000h
170000h
16F000h
160000h
15F000h
150000h
14F000h
140000h
13F000h
130000h
12F000h
120000h
11F000h
110000h
10F000h
100000h
Address range
17FFFFh
170FFFh
16FFFFh
160FFFh
15FFFFh
150FFFh
14FFFFh
140FFFh
13FFFFh
130FFFh
12FFFFh
120FFFh
11FFFFh
110FFFh
10FFFFh
100FFFh
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